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Thermal and Ion Bean Induced Reactions in Ni on BP

Published online by Cambridge University Press:  26 February 2011

Naoto Kobayashi ,
Yukinobu Kumashiro ,
Peter Revesz ,
Jian Li  and
James W. Mayer
Naoto Kobayashi
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305 Japan
Yukinobu Kumashiro
Affiliation:
Yokohama National University, Tokiwadai 156, Hodogaya–ku, Yokohama, 240 Japan
Peter Revesz
Affiliation:
Cornell University, Department of Materials Science and Engineering, Ithaca, NY 14853
Jian Li
Affiliation:
Cornell University, Department of Materials Science and Engineering, Ithaca, NY 14853
James W. Mayer
Affiliation:
Cornell University, Department of Materials Science and Engineering, Ithaca, NY 14853
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Abstract

The solid phase reactions of Ni thin films with refractory wide bandgap semiconductor BP(100) were investigated both in the thermal process and the ion beam induced process with RBS, AES, XRD and XPS. In the thermal reaction process, reactions of Ni thin films with BP started around 350°C. Transient metastable phases were observed between 400°C and 450°C. The formation of the fully reacted crystalline phase with the mixture of NiB and Ni3P was observed at 450°C. At elevated temperatures above 600°C, mixture of phases with less Ni content was found to be formed. For the ion beam induced process inhomogeneous reaction was observed at LN2 and the reaction at RT showed an amorphous phase with the same composition as the first thermal phase. The reaction at 200°C induced the same crystalline phase as the first thermal phase. The reacted layer thickness as a function of the ion beam fluence between RT and 300°C increased linearly with the fluence by showing the thermal dependence with an activation energy of Ea=O.31±O, O6eV above 100°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 595
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

[1] Kumashiro, Y. and Okada, Y., Appl. Phys. Lett. 47, 64 (1985).Google Scholar
[2] Mayer, J. W., Tsaur, B. Y., Lau, S.S. and Hung, L.S., Nucl. Instrum. Methods 182/183, 1 (1981).Google Scholar
[3] Kobayashi, N., Kumashiro, Y., Revesz, P., Li, Jian and Mayer, J. W., Appl. Phys. Lett. 54, 1914 (1989).Google Scholar
[4] Kumashiro, Y., Okada, Y. and Gonda, S., J. Cryst. Growth 70, 7 (1984).Google Scholar
[5] Doolittle, L.R., Nucl. Instrum. Methods B9, 344 (1985).Google Scholar
[6] Tu, K.N. and Mayer, J.W., in Thin Films, Interdiffusion and Reactions edited by Poate, J. M., Tu, K.N. and Mayer, J.W. (J. Wiley, NY, 1978) pp. 359–405.Google Scholar
[7] Averback, R.S., Thompson, L.J., Jr., Moyle, J. and Schalit, M., J. AppI. Phys. 53, 1342 (1982).Google Scholar
[8] Pal, C.S., Hanson, C.M. and Lau, S.S., J. Appl. Phys. 57, 618 (1985).Google Scholar
[9] Ohdomari, I., Sha, S., Aochi, H., Chikyow, T. and Suzuki, S., J. Appl. Phys. 62, 3747 (1987).Google Scholar
[10] Narayan, J., Fathy, D., Holland, O.W., Appleton, B.R., Davis, R. F. and Becher, P.F., J. Appl. Phys. 56, 1577 (1984).Google Scholar