Hostname: page-component-77c89778f8-9q27g Total loading time: 0 Render date: 2024-07-19T15:40:54.211Z Has data issue: false hasContentIssue false
  • English
  • Français

Theoretical Model And Computer Simulation Results Of Enhanced Diffusion Of High-Temperature Implanted Aluminum In Silicon Carbide

Published online by Cambridge University Press:  10 February 2011

G. V. Gadiyak
G. V. Gadiyak*
Affiliation:
Institute of Computational Technologies, Russian Academy of Sciences, Siberian Division, Novosibirsk, 630090, Russia, +7-(3 832) 35-02-80, +7-(3832) 35-12-42, Gadiyak@adm.ict.nsk.su
Get access

Abstract

Wide applications of silicon carbide (SiC) films in microelectronics devices make especially important predictions of the doping profiles during and/or after thermal treatment. A macroscopic kinetic model of enhanced diffusion of aluminum in SiC films during ion bombardment at high temperatures has been considered. The set of equations describing the kinetic model takes into account generation Vc and Csi vacancies during bombardment, migration of mobile species (Al) toward the surface and reactions of Al atoms with Vc and Vsi vacancies, as well as Al evolution from the film. The calculations were carried out for the flux of Al ions with energy 40 keV and current density 20 μA/cm2 to a dose 2 1016 cm−2 at 1800° C. The calculations have shown that the Al content in SiC at these condition does not exceed 40%. The calculation profile of Al is in a good agreement with experimental data [1].

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 223
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Suvorov, A.V., Usov, I.O., Sokolov, V.V., and Suvorova, A.A. ‘Enhanced diffusion of high-temperature implanted aluminum in silicon carbide.” MRS-95 Fall Meeting, Boston, MA USA (in press).Google Scholar
2. J..Edmond, A., Withrow, S.P.,Wadin, W. and Davis, R.F., in Interfaces, Superlattices, and Thin Films, edited by Dow, John D. and Schuller, Ivan K. (Mater.Res.Soc.Proc. 77, Pittsburg, PA,1987), p. 193–198.Google Scholar
4. Gadiyak, G.V., Bibik, A.V., Proc. Int. Conf Ion Beam Modification of Materials, Canberra, 1996, p. 810.Google Scholar