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MRS Online Proceedings Library (OPL) MRS Online Proceedings Library (OPL)

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Tetragonal Phase in Ge Doped HfO2 Films on Si Investigated by X-ray Absorption Spectroscopy

Published online by Cambridge University Press:  31 January 2011

Leonardo Miotti ,
Karen Paz Bastos ,
Cláudio Radtke  and
Gerald Lucovsky
Leonardo Miotti
Affiliation:
lmiotti@gmail.com, NCSU, Physics, Raleigh, North Carolina, United States
Karen Paz Bastos
Affiliation:
kpbastos@gmail.com, NCSU, Physics, Raleigh, North Carolina, United States
Cláudio Radtke
Affiliation:
claudio@iq.ufrgs., UFRGS, quimica, Porto Alegre, RS, Brazil
Gerald Lucovsky
Affiliation:
lucovsky@ncsu.edu, NCSU, Physics, Rlaeigh, North Carolina, United States
Corresponding
E-mail address:
lmiotti@gmail.com
kpbastos@gmail.com
claudio@iq.ufrgs.
lucovsky@ncsu.edu
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Abstract

The stabilization of the tetragonal phase of 5 nm thick HfO2 films by Ge doping is investigated using x-ray absorption spectroscopy around O and Ge Kedges and by Rutherford backscattering spectrometry. We show that Ge concentrations higher than ˜5at.% are not stable during rapid thermal anneal at temperatures as low as 750°C and that the tetragonal phase of HfO2 is achieved at this Ge concentration.

Keywords

dielectric phase equilibria chemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1194: Symposium A – High-k Dielectrics on Semiconductors with High Carrier Mobility , 2009 , 1194-A01-02
Copyright
Copyright © Materials Research Society 2010

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References

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Tetragonal Phase in Ge Doped HfO2 Films on Si Investigated by X-ray Absorption Spectroscopy
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