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Temperature Dependent Amorphization of Silicon During Self-Implantation1

Published online by Cambridge University Press:  26 February 2011

W.P. Maszara ,
G.A. Rozgonyi ,
L. Simpson  and
J.J. Wortman
W.P. Maszara
Affiliation:
Materials Engineering Dept., North Carolina State Univ., Raleigh NC 27695
G.A. Rozgonyi
Affiliation:
Materials Engineering Dept., North Carolina State Univ., Raleigh NC 27695
L. Simpson
Affiliation:
Dept. of Electrical and Computer Engineering, NCSU, Raleigh NC 27695
J.J. Wortman
Affiliation:
Dept. of Electrical and Computer Engineering, NCSU, Raleigh NC 27695
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Abstract

We have investigated the damage which results from silicon self-implantation for the range of doses from 2E14 to 1E16 cm−2 for temperatures from 82 to 296 K for 150 and 300 keV implants. Cross-sectional TEM was used to evaluate the nature of the amorphous layer. The experimental results were correlated with computer calculated damage distributions using a Monte Carlo simulation program. The depth of amorphous-crystalline interface(s) was evaluated as a function of dose and temperature. An experimental damage energy density curve was constructed. Using the curve, a critical energy density for amorphization, Ec was calculated for the samples implanted at different temperatures. The energy was found to depend on depth and implant energy, and it increased with temperature. A study of a-c interface morphology shows no dependance on temperature within the range considered. Kinetics of dynamic annealing are discussed in conjunction with the above findings.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 51: Symposium A – Beam-Solid Interactions and Phase Transformations , 1985 , 381
Copyright
Copyright © Materials Research Society 1985

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Footnotes

2

Present address: Allied Bendix Aerospace, Columbia MD 21045

1

Partially supported by Semiconductor Research Corporation

References

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