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Temperature And Dose Dependence of An Amorphous Layer Formed By Ion Implantation
Published online by Cambridge University Press: 26 February 2011
Abstract
A model is formulated to predict the width of an amorphous layer in Si produced by ion implantation. The dependency of the amorphous Si layer width on the ion implantation energy, dose, and temperature is computed.
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- Copyright © Materials Research Society 1985