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Tem Study of Porous Silicon Fabricated from N- and P-Type Doped Polycrystalline Films

Published online by Cambridge University Press:  15 February 2011

L. Haji ,
Y. Le Thomas ,
F. Chane Che Lai  and
P. Joubert
L. Haji
Affiliation:
Groupe de Microélectronique et Visualisation, Université de Rennes 1; TUT de Lannion, Boîte Postale 150; 22302 Lannion Cedex, France
Y. Le Thomas
Affiliation:
Groupe de Microélectronique et Visualisation, Université de Rennes 1; TUT de Lannion, Boîte Postale 150; 22302 Lannion Cedex, France
F. Chane Che Lai
Affiliation:
Groupe de Microélectronique et Visualisation, Université de Rennes 1; TUT de Lannion, Boîte Postale 150; 22302 Lannion Cedex, France
P. Joubert
Affiliation:
Groupe de Microélectronique et Visualisation, Université de Rennes 1; TUT de Lannion, Boîte Postale 150; 22302 Lannion Cedex, France
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Abstract

The formation of porous silicon (PS) from n/p, n+/p and p+/n structures carried from polycrystalline silicon films (poly-Si) deposited on single crystal silicon (c-Si) substrates was studied by cross-sectional transmission electron microscopy. Our results clearly show that the pore formation in such structures involve the extended defects of the poly-Si film. The role played by these defects depends on the doping type and level, and on whether the anodization is performed under illumination or not.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 421
Copyright
Copyright © Materials Research Society 1997

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References

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