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TEM and HREM study of silicon and platinum nanoscale ensembles in 3D dielectric opal matrix

Published online by Cambridge University Press:  17 March 2011

N. A. Feoktistov ,
V. G. Golubev ,
J.L. Hutchison ,
D. A. Kurdyukov ,
A. B. Pevtsov ,
R. Schwarz ,
J. Sloan  and
L.M. Sorokin
N. A. Feoktistov
Affiliation:
Ioffe Physico-Technical Institute, RAS, 194021 St. Petersburg, Russia
V. G. Golubev
Affiliation:
Ioffe Physico-Technical Institute, RAS, 194021 St. Petersburg, Russia
J.L. Hutchison
Affiliation:
Department of Materials, Oxford University, Parks Road, Oxford OX1 3PH, UK
D. A. Kurdyukov
Affiliation:
Ioffe Physico-Technical Institute, RAS, 194021 St. Petersburg, Russia
A. B. Pevtsov
Affiliation:
Ioffe Physico-Technical Institute, RAS, 194021 St. Petersburg, Russia
R. Schwarz
Affiliation:
Instituto Superior Tecnico, Departamento de Fizica, P-1096 LISBOA Codex, Portugal
J. Sloan
Affiliation:
Wolfson Catalysis Centre, Inorganic Chemistry Laboratory, Oxford University OX1 3QR, UK
L.M. Sorokin
Affiliation:
Ioffe Physico-Technical Institute, RAS, 194021 St. Petersburg, Russia
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Abstract

In the present paper regular systems of silicon and platinum assemblies have been fabricated in a three-dimensional (3D) void sublattice of synthetic opal. The detailed TEM and HREM structure study of ‘opal-Si’ and ‘opal-Pt-Si’ composites was carried out. It was found that in regular composites ‘opal-Si’ the silica spheres were covered uniformly with a nanocrystalline silicon layer of up to 25-30 nm in thickness. To form the Pt-Si contact the silica spheres were coated with platinum layer before embedding silicon. The results obtained demonstrate a possibility of creating 3D multilayer semiconductor structure (p-n junctions, Schottky barriers etc.) on the inner surface of opal voids.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A24.4
Copyright
Copyright © Materials Research Society 2000

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References

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