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The suppression of leakage current in the solid phase crystallized silicon (SPC-Si) TFT employing off-state bias annealing under light illumination.

Published online by Cambridge University Press:  06 September 2011

Sang-Geun Park
Affiliation:
Seoul National University
Seung-Hee Kuk
Affiliation:
Seoul National University
Jong-Seok Woo
Affiliation:
Seoul National University
Min-Koo Han*
Affiliation:
Seoul National University
*
*corresponding author: mkh@snu.ac.kr
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Abstract

We fabricated PMOS SPC-Si TFTs which show better current uniformity than ELA poly-Si TFTs and superior stability compare to a-Si:H TFT on a glass substrate employing alternating magnetic field crystallization. However the leakage current of SPC-Si TFT was rather high for circuit element of AMOLED display due to many grain boundaries which could be electron hole generation centers. We applied off-state bias annealing of VGS=5V, VDS=-20V in order to suppress the leakage current of SPC-Si TFT. When the off-state bias annealing was applied on the SPC-Si TFT, the electron carriers were trapped in the gate insulator by high gate-drain voltage (25V). The trapped electron carriers could reduce the gate-drain field, so that the leakage current of SPC-Si TFT was reduced after off-state bias annealing. . We also applied same off state bias annealing at SPC-Si TFT with 20,000 lx light illumination in order to verify the reduction of leakage current of SPC-Si TFT under light illumination. The leakage current of SPC-Si TFT was reduced successfully even under light illumination during off-state bias annealing. The off-state bias annealed SPC-Si TFT could be used as pixel element of high quality AMOLED display.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Lecomber, P. G., Spear, W. E., and Ghaith, A. G., “Amorphous Silicon Field Effect Device and Possible Application”, IEEE Electron Lett., Vol. 15, p.179, 1979.10.1049/el:19790126Google Scholar
2. Powell, M.J., “Charge trapping instabilities in amorphous silicon-silicon nitride thin-film transistors”, Appl. Phys. Lett. 43(6), pp.597599, 1983.10.1063/1.94399Google Scholar
3. Farmakis, F. V., Brini, J., Kamarinos, G., Angelis, C. T., Dimitriadis, C. A., and Miyasaka, M., “On-Current Modeling of Large-Grain Polycrystalline Silicon Thin-Film Transistors”, IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 48, No. 4, Apr. 2001 10.1109/16.915695Google Scholar
4. Kail, F., Hadjadj, A., Roca i Cabarrocas, P., “Hydrogen diffusion and induced-crystallization in intrinsic and doped hydrogenated amorphous silicon films”, Thin Solid Films, vol. 487, Issues 1-2, 1 pp. 126131, Sep, 2005 10.1016/j.tsf.2005.01.049Google Scholar
5. Yazakis, M., Takenakal, S. and Ohshima, H., “Conduction Mechanism of Leakage Current Observed in Metal-Oxide-Semiconductor Transistors and Poly-Si Thin-Film Transistors”, Jpn. J. Appl. Phys. Vol. 31 pp. 206209 Part 1, No. 2A, 15 Feb., 1992 10.1143/JJAP.31.206Google Scholar
6. Moon, K-C, Lee, J-H, and Han, M-K, “The Study of Hot-Carrier Stress on Poly-Si TFT Employing C-V Measurement”, IEEE Transaction on Electron Device, vol. 52, No.4, pp.512517, April, 2005 10.1109/TED.2005.844740Google Scholar