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The suppression of leakage current in the solid phase crystallized silicon (SPC-Si) TFT employing off-state bias annealing under light illumination.

Published online by Cambridge University Press:  06 September 2011

Sang-Geun Park
Seoul National University
Seung-Hee Kuk
Seoul National University
Jong-Seok Woo
Seoul National University
Min-Koo Han*
Seoul National University
*corresponding author:
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We fabricated PMOS SPC-Si TFTs which show better current uniformity than ELA poly-Si TFTs and superior stability compare to a-Si:H TFT on a glass substrate employing alternating magnetic field crystallization. However the leakage current of SPC-Si TFT was rather high for circuit element of AMOLED display due to many grain boundaries which could be electron hole generation centers. We applied off-state bias annealing of VGS=5V, VDS=-20V in order to suppress the leakage current of SPC-Si TFT. When the off-state bias annealing was applied on the SPC-Si TFT, the electron carriers were trapped in the gate insulator by high gate-drain voltage (25V). The trapped electron carriers could reduce the gate-drain field, so that the leakage current of SPC-Si TFT was reduced after off-state bias annealing. . We also applied same off state bias annealing at SPC-Si TFT with 20,000 lx light illumination in order to verify the reduction of leakage current of SPC-Si TFT under light illumination. The leakage current of SPC-Si TFT was reduced successfully even under light illumination during off-state bias annealing. The off-state bias annealed SPC-Si TFT could be used as pixel element of high quality AMOLED display.

Research Article
Copyright © Materials Research Society 2011

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