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Study on the Diamond Field Emitter Fabricated by Transfer Mold Technique

Published online by Cambridge University Press:  10 February 2011

Byeong-Kwon Ju
Affiliation:
Div. Electronics and Information Technology, KIST, Cheongryang P.O. Box 131, Seoul, Korea
Seong-Jin Kim
Affiliation:
Div. Electronics and Information Technology, KIST, Cheongryang P.O. Box 131, Seoul, Korea
Jae-Hoon Jung
Affiliation:
Div. Electronics and Information Technology, KIST, Cheongryang P.O. Box 131, Seoul, Korea
Yun-Hi Lee
Affiliation:
Div. Electronics and Information Technology, KIST, Cheongryang P.O. Box 131, Seoul, Korea
Beom Soo Park
Affiliation:
Div. Electronics and Information Technology, KIST, Cheongryang P.O. Box 131, Seoul, Korea
Young-Joon Baik
Affiliation:
Div. Electronics and Information Technology, KIST, Cheongryang P.O. Box 131, Seoul, Korea
Sung-Kyoo Lim
Affiliation:
Dep. Electronics Engineering, Dankook University, #29 Anseo-dong, Cheonan, Korea
Myung Hwan Oh
Affiliation:
Div. Electronics and Information Technology, KIST, Cheongryang P.O. Box 131, Seoul, Korea
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Abstract

Strip-shaped diamond-tip field emitter array was fabricated by using the transfer mold technique. The sharp turn-on characteristic was observed from the current-voltage measurement of the fabricated diamond-tip field emitter array. The turn-on characteristic of the diamond-tip field emitter array was compared with that of a flat diamond film. High emission current density was obtained from the diamond-tip field emitter array. The threshold voltage of the diamond-tip field emitter array was lower than that of a flat diamond film.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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