Hostname: page-component-848d4c4894-jbqgn Total loading time: 0 Render date: 2024-06-13T13:24:45.916Z Has data issue: false hasContentIssue false

Study on Multilayered Electrodes for Ferroelectric Thin Film Capacitors

Published online by Cambridge University Press:  15 February 2011

Ilsub Chung
Affiliation:
Department of Materials Science and Engineering, VA Tech., Blacksburg, VA 24061
J.K. Lee
Affiliation:
Department of Materials Science and Engineering, VA Tech., Blacksburg, VA 24061
Wan In Lee
Affiliation:
Department of Materials Science and Engineering, VA Tech., Blacksburg, VA 24061
C.W. Chung
Affiliation:
Department of Materials Science and Engineering, VA Tech., Blacksburg, VA 24061
Get access

Abstract

The ferroelectric properties of PZT on RuO2 electrodes were compared to those on RuOStudy on Multilayered Electrodes for Ferroelectric Thin Film Capacitors. It seems that the microstructure of PZT film plays an important role in the improvement of electrical properties. In particular, the change in the grain size of PZT film is responsible for the enhancement of the electrical properties. It was found in this study that films with smaller grain size had larger coercive fields. The exact dependence of the grain size on the hysteretic property is not fully understood at present. However, it is believed that the grain size affects both domain formation and domain pinning because of the influence of grain boundaries. The change in physical properties of PZT films due to the bottom electrode is understood in terms of interfacial modifications. Here we report on a method to modify physical properties of PZT films utilizing interfacial engineering.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Yoo, I.K. and Desu, S.B., Phys. Stat. Sol., A, V. 133, p. 565, (1992)Google Scholar
2. Duiker, H.M., Beale, P.D., Scott, J.F., Paz de Araujo, C.A., Melnick, B.M., Cuchiaro, J.D., and McMillan, L.D., J. Appl. Phys., 68, 5783 (1990)Google Scholar
3. Kingon, A.I., Auciello, O., Ameen, M.S., Rou, S.H., and Krauss, A.R., Appl. Phys. Lett., 58, 1470 (1991)Google Scholar
4. Parikh, N.R., Stephen, J.T., Swanson, M.L., and Myers, E.A., Mat. Res. Soc. Symp. Proc., 200, 193, (1990)Google Scholar
5. Vijay, D.P., and Desu, S.B., J. Electrochem. Soc., 140, 2640 (1993)Google Scholar
6. Kwok, C.K. and Desu, S.B., J. Mater. Res., 8, 339 (1993)Google Scholar
7. Ramesh, R., Chan, W.K., Wilkens, B., Sands, T., Tarascon, J.M., and Keramidas, V.G., Integrated Ferroelectrics, 1992, V. 1, p. 1, 1992 Google Scholar
8. Eom, C.B., Van Dover, R.B., Phillips, Julia M., Fleming, R.M., Cava, R.J., Marshall, J.H., Werder, D.J., MRS Proc., V. 310, 1993 Google Scholar
9. Gifford, K.D., Al-Shareef, H.N., Rou, S.H., Hren, P.D., Auciello, O., and Kingon, A.I., MRS Proc., V. 243, p. 191, 1992 Google Scholar
10. Lee, Wan In, Lee, J.K., Chung, Ilsub, Chung, C.W., Yoo, I.K., and Desu, S.B., in this volumeGoogle Scholar
11. Mansour, S.A. and Vest, R.W., Integrated Ferroelectrics, V. 1, p. 57, 1992 Google Scholar
12. Voigt, J.A., Turtle, B.A., Headley, T.J., Eatough, M.D., Lamppa, D.L., and Goodnow, D., MRS Proc. V. 310, p. 15, 1993 Google Scholar