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A Study of the Photovoltaic effect of A Semiconductor Grain Boundary by A Scanning Laser Beam

Published online by Cambridge University Press:  26 February 2011

Jerng-Sik Song  and
Edward S. Yang
Jerng-Sik Song
Affiliation:
Department of Electrical Engineering Columbia University, New York, NY 10027
Edward S. Yang
Affiliation:
Department of Electrical Engineering Columbia University, New York, NY 10027
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Abstract

Experimental observation of the photovoltaic effect of a semiconductor grain boundary with a scanning laser beam is analyzed assuming a single trap energy level. The photo-current is calculated from the recombination velocity and the concentration of minority carriers at a grain boundary which was derived from the continuity equation. Open circuit voltage across a sample is obtained from equating this recombination current to compensating thermionic emission current. Using recombination velocity and diffusion length as variables, tha calculated open circuit voltage is compared with experimental data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 657
Copyright
Copyright © Materials Research Society 1986

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