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A Study of Surface and Subsurface Properties of Si (100) After Hydrogen ion-Beam Exposure

Published online by Cambridge University Press:  21 February 2011

H. X. Liu ,
T. P. Schneider ,
J. Montgomery ,
Y. L. Chen ,
A. Buczkowski ,
F. Shimura ,
R. J. Nemanich ,
D. M. Maher ,
D. Korzec  and
J. Engemann
H. X. Liu
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
T. P. Schneider
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695
J. Montgomery
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695
Y. L. Chen
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
A. Buczkowski
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
F. Shimura
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
R. J. Nemanich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695
D. M. Maher
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
D. Korzec
Affiliation:
Microstructure Research Center, University of Wuppertal, 5600 Wuppertal 1, Germany
J. Engemann
Affiliation:
Microstructure Research Center, University of Wuppertal, 5600 Wuppertal 1, Germany
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Abstract

The time/temperature dependencies of the surface roughness, subsurface extended defect formation, and minority-carrier lifetime are reported for n-type (100) silicon wafers exposed to a hydrogen ion beam. Surface roughness is assessed from atomic force microscopy, the distribution and nature of extended defects are determined from transmission electron microscopy, and the minority-carrier lifetime is evaluated by a non-contact laser-microwave technique. The surface roughness exhibits a weak dependence on ion-beam exposure time for the temperature range studied, whereas the distribution of extended defects may depend on exposure time at a given wafer temperature. The surface and bulk components of the minoritycarrier lifetimes are consistent with these surface and subsurface properties. Transmission electron microscopy analyses demonstrate that the associated strain field of the extended defects is compressive in nature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 315: Symposium Y – Surface Chemical Cleaning and Passivation for Semiconductor Processing , 1993 , 231
Copyright
Copyright © Materials Research Society 1993

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References

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