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Study of Defect Generated During Cu/Black Diamond CMP Process

Published online by Cambridge University Press:  01 February 2011

Shaoyu Wu
Affiliation:
Institute of Microelectronics, DSIC-MD, 11 Science Park Road, Singapore 117685
Ning Li
Affiliation:
Institute of Microelectronics, DSIC-MD, 11 Science Park Road, Singapore 117685
J. M. Kang
Affiliation:
Institute of Microelectronics, DSIC-MD, 11 Science Park Road, Singapore 117685
T. W. M. Lam
Affiliation:
Institute of Microelectronics, DSIC-MD, 11 Science Park Road, Singapore 117685
B. Lin
Affiliation:
Institute of Microelectronics, DSIC-MD, 11 Science Park Road, Singapore 117685
T. Selvaraj
Affiliation:
Institute of Microelectronics, DSIC-MD, 11 Science Park Road, Singapore 117685
S. P. Zhao
Affiliation:
Institute of Microelectronics, DSIC-MD, 11 Science Park Road, Singapore 117685
R. Kumar
Affiliation:
Institute of Microelectronics, DSIC-MD, 11 Science Park Road, Singapore 117685
P. D. Foo
Affiliation:
Institute of Microelectronics, DSIC-MD, 11 Science Park Road, Singapore 117685
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Abstract

Black Diamond (BD) is gaining popularity as a low k dielectric for copper/low k integration. However, because of lower hardness and more hydrophobic in nature of BD film surface comparing with those of the conventional oxide, some specific defects appear during CMP process of Cu/BD patterned wafers. In this study, the patterned wafer inspection systems, AIT II, and SEM review station are used to review and to classify such defects generated from CMP process. Using conventional Cu/Oxide CMP process, the percentage of these specific defects from Cu/BD CMP is typically more than 60 of total defect count. By modifying the composition of slurry with new additives and optimization of polishing and cleaning parameters, the total defect count can be reduced by 80%, in which the amount of specific defects is less than 5% of total defect count.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

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