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Studies of Recombination Transfer in Alloys and Thin Quantum Wells of Ga0.47In0.53As/InP Using the Optically Detected Impact Ionisation Technique

Published online by Cambridge University Press:  26 February 2011

P. OMLING
P. OMLING*
Affiliation:
Department of Solid State Physics, University of Lund, Box 118, S-221 00 Lund, Sweden
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Abstract

The possibilities of the optically detected impact ionisation (ODII) technique are demonstrated. It is shown how the ODII technique can be used to extract detailed spectroscopie information in thick InGaAs layers where resolved peaks from free excitons, bound excitons, and free-to-acceptor recombinations are obtained. In an investigation of single- and multiple-monolayer quantum wells of lattice-matched GalnAs in InP the experimental data show how the transfer of impact ionised electrons from the InP layers to the different InGaAs quantum wells, where they recombine as free excitons, can be studied. The recombination in a thicker quantum well (18 monolayer) shows a more complicated behaviour, and an explanation based on defect-related recombination, including bound-exciton and free-to-bound recombinations, is suggested.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 259
Copyright
Copyright © Materials Research Society 1992

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References

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