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Structure and electrical activity of rare-earth dopants in selected III-Vs

Published online by Cambridge University Press:  01 February 2011

J.-S. Filhol ,
S. Petit ,
R. Jones ,
B. Hourahine ,
Th. Frauenheim ,
H. Overhof ,
J. Coutinho ,
M. J. Shaw ,
P. R. Briddon  and
S. Öberg
J.-S. Filhol
Affiliation:
School of Physics, University of Exeter, Stocker Road, Exeter, EX4 4QL, United Kingdom
S. Petit
Affiliation:
School of Physics, University of Exeter, Stocker Road, Exeter, EX4 4QL, United Kingdom
R. Jones
Affiliation:
School of Physics, University of Exeter, Stocker Road, Exeter, EX4 4QL, United Kingdom
B. Hourahine
Affiliation:
Theoretische Physik, Universität Paderborn, Warburger Str. 100, 33098 Paderborn, Germany
Th. Frauenheim
Affiliation:
Theoretische Physik, Universität Paderborn, Warburger Str. 100, 33098 Paderborn, Germany
H. Overhof
Affiliation:
Theoretische Physik, Universität Paderborn, Warburger Str. 100, 33098 Paderborn, Germany
J. Coutinho
Affiliation:
Department of Physics, University of Aveiro, 3810 Aveiro, Portugal
M. J. Shaw
Affiliation:
School of Natural Sciences, University of Newcastle upon Tyne, Newcastle upon Tyne, NE1 7 RU, United Kingdom
P. R. Briddon
Affiliation:
School of Natural Sciences, University of Newcastle upon Tyne, Newcastle upon Tyne, NE1 7 RU, United Kingdom
S. Öberg
Affiliation:
Luleå University of Technology SE-97187 Luleå, Sweden
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Abstract

Density functional theory is used to investigate Eu, Er and Tm rare earth (RE) impurities in GaAs, GaN and AlN. The most stable site is when the RE is located at a group III substitutional site but in GaN and GaAs these defects do not then possess any gap levels, unlike AlN. RE-VN defects in GaN are shown to possess levels which could act as traps for excitons. The interaction of oxygen with substitutional REs is also considered.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y5.3
Copyright
Copyright © Materials Research Society 2004

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References

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