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Structure Analysis of CeO2/ZrO2/Si Multilayer Thin Films by HRTEM

Published online by Cambridge University Press:  10 February 2011

Takanori Kiguchi ,
Naoki Wakiya ,
Kazuo Shinozaki  and
Nobuyasu Mizutani
Takanori Kiguchi
Affiliation:
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
Naoki Wakiya
Affiliation:
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
Kazuo Shinozaki
Affiliation:
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
Nobuyasu Mizutani
Affiliation:
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Abstract

The dependence of the structures of the CeO2/YSZ (Y2O3-ZrO2)/Si multilayer thin films on the YSZ thickness was investigated by HRTEM. The CeO2/YSZ interface is semicoherent with misfit dislocations for the films with 110 nm and 30 nm YSZ thickness. On the other hand, the structure of the films with 0.5 nun YSZ layer are very muzzy since the YSZ is very disordered. However, the CeO2 layer on the 0.5 nm of the YSZ has the lowest mosaicity (highest quality) near the surface, although once the epitaxy is weakened in the YSZ layer and the CeO2 layer just above the YSZ. The mosaicity of the YSZ layer is thought not to be taken over into the CeO2 layer since the columnar structure of the thinner YSZ layer becomes obscure. Moreover, a YSZ layer of only 0.5 nm could inhibit the reduction of CeO2 by Si. The ultra thin YSZ layer of 0.5 nm is necessary because it inhibits the growth of the columnar structure and protects the protection of CeO2 layer from reduction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 592 , 1999 , 183
Copyright
Copyright © Materials Research Society 2000

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