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Structural Studies of an InAs-GaAs Superlattice Alloy

Published online by Cambridge University Press:  22 February 2011

M. C. Tamargo ,
R. Hull ,
L. H. Greene ,
J. R. Hayes ,
N. Tabatabaie  and
A. Y. Cho
M. C. Tamargo
Affiliation:
Bell Communications Research, Murray Hill, New Jersey 07974
R. Hull
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
L. H. Greene
Affiliation:
Bell Communications Research, Murray Hill, New Jersey 07974
J. R. Hayes
Affiliation:
Bell Communications Research, Murray Hill, New Jersey 07974
N. Tabatabaie
Affiliation:
Bell Communications Research, Murray Hill, New Jersey 07974
A. Y. Cho
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

Thin alternating layers of InAs and GaAs have been grown by MBE on buffer layers lattice matched to InP. The layer structure was evaluated by transmission electron microscopy (TEM) and low angle X-ray scattering. Commensurate epitaxial layers approximately 15Å thick were obtained in spite of the large lattice mismatch (7%). These results and their implication for growth conditions of strained-layer superlattices will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 47: Symposium C – Thin Films: The Relationship of Structure to Properties , 1985 , 271
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

[1] Hayes, J. R., Adams, A. R., Greene, P. D. “GaInAsP Alloy Semiconductors” edited by Pearsall, T. P. (John Wiley, 1982) p. 189.Google Scholar
[2] Yao, T., Jpn. J. Appl. Phys. 22 (1983) 680.Google Scholar
[3] Matthews, J. M., Blakeslee, A. E., J. Cryst, Growth 27 (1974) 118.Google Scholar
[4] Tamargo, M. C., Hull, R., Greene, L. H., Hayes, J. R., Cho, A. Y., Appl. Phys. Let. 46 (1985) 569.Google Scholar
[5] Grunthaner, F. J., “International Conference on Superlattices, Microstructures and Microdevice,” Champaign, Ill. August 1984.Google Scholar