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Structural Relaxation of Amorphous Silicon Induced by High Temperature Annealing

Published online by Cambridge University Press:  26 February 2011

L. De Wit
Affiliation:
FOM-Institute for Atomic and Molecular Physics Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
S. Roorda
Affiliation:
FOM-Institute for Atomic and Molecular Physics Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
W.C. Sinke
Affiliation:
FOM-Institute for Atomic and Molecular Physics Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
F.W. Saris
Affiliation:
FOM-Institute for Atomic and Molecular Physics Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
A.J.M. Berntsen
Affiliation:
Department of Atomic and Interface Physics, Debye Institute, Utrecht University, P.O. Box 80000, NL-3508 TA Utrecht, The Netherlands
W.F. Van Der Weg
Affiliation:
Department of Atomic and Interface Physics, Debye Institute, Utrecht University, P.O. Box 80000, NL-3508 TA Utrecht, The Netherlands
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Extract

Structural relaxation of amorphous Si is studied in the temperature range 500-850 °C using Raman spectroscopy. The minumum value for the Raman peakwidth that can be obtained is inversely proportional to the anneal temperature. The relaxation process is basically the same in a-Si prepared by ion implantation and by vacuum evaporation.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

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