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Structural Properties of Polycrystalline Silicon Films Formed by Pulsed Rapid Thermal Processing

Published online by Cambridge University Press:  10 February 2011

Yongqian Wang
Affiliation:
State laboratory for Surface Physics, Institute of Semiconductors & Center for Condensed Matter Physics, Chinese Academy of Science, P.O.Box 912, Beijing 100083, China
Xianbo Liao
Affiliation:
State laboratory for Surface Physics, Institute of Semiconductors & Center for Condensed Matter Physics, Chinese Academy of Science, P.O.Box 912, Beijing 100083, China
Hongwei Diao
Affiliation:
State laboratory for Surface Physics, Institute of Semiconductors & Center for Condensed Matter Physics, Chinese Academy of Science, P.O.Box 912, Beijing 100083, China
Jie He
Affiliation:
State laboratory for Surface Physics, Institute of Semiconductors & Center for Condensed Matter Physics, Chinese Academy of Science, P.O.Box 912, Beijing 100083, China
Zhixun Ma
Affiliation:
State laboratory for Surface Physics, Institute of Semiconductors & Center for Condensed Matter Physics, Chinese Academy of Science, P.O.Box 912, Beijing 100083, China
Guozhen Yue
Affiliation:
State laboratory for Surface Physics, Institute of Semiconductors & Center for Condensed Matter Physics, Chinese Academy of Science, P.O.Box 912, Beijing 100083, China
Shuran Sheng
Affiliation:
State laboratory for Surface Physics, Institute of Semiconductors & Center for Condensed Matter Physics, Chinese Academy of Science, P.O.Box 912, Beijing 100083, China
Guanglin Kong
Affiliation:
State laboratory for Surface Physics, Institute of Semiconductors & Center for Condensed Matter Physics, Chinese Academy of Science, P.O.Box 912, Beijing 100083, China
Yuwen Zhao
Affiliation:
Beijing Solar Energy Research Institute, Beijing 100083, China
Zhongming Li
Affiliation:
Beijing Solar Energy Research Institute, Beijing 100083, China
Feng Yun
Affiliation:
Beijing Solar Energy Research Institute, Beijing 100083, China
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Abstract

A novel pulsed rapid thermal processing (PRTP) method has been used for realizing the solid-phase crystallization of amorphous silicon films prepared by PECVD. The microstructure and surface morphology of the crystallized films are investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). The results indicate that this PRTP is a suitable postcrystallization technique for fabricating large-area polycrystalline silicon films with good structural qualities such as large grain size, small lattice microstain and smooth surface morphology on low-cost substrate.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

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