Skip to main content Accessibility help
×
Home
Hostname: page-component-59b7f5684b-s82fj Total loading time: 0.405 Render date: 2022-09-27T19:16:27.088Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "useRatesEcommerce": false, "displayNetworkTab": true, "displayNetworkMapGraph": false, "useSa": true } hasContentIssue true

Structural and Optical Properties of InGaN/GaN Multi-Quantum Well Structures with Different Well Widths

Published online by Cambridge University Press:  01 February 2011

Young-Hoon KIM
Affiliation:
Department of Physics, Chungnam National University, Taejon, korea 305-764
Chang-Soo KIM
Affiliation:
National Research Laboratory on Quantum Dot Technology, Materials Evaluation Center, Korea Research Institute of Standards and Science, Taejon, Korea 305-600
Sam-Kyu NOH
Affiliation:
National Research Laboratory on Quantum Dot Technology, Materials Evaluation Center, Korea Research Institute of Standards and Science, Taejon, Korea 305-600
Jae-Young LEEM
Affiliation:
National Research Laboratory on Quantum Dot Technology, Materials Evaluation Center, Korea Research Institute of Standards and Science, Taejon, Korea 305-600
Kee-Young LIM
Affiliation:
Semiconductor Physics Research center and Department of Semiconductor Science and Technology, Chonbuk National University, Chonju, Korea 561-756
Byung-Sung O
Affiliation:
Department of Physics, Chungnam National University, Taejon, korea 305-764
Jay P. Song
Affiliation:
SongJee Industrial Corporation, Sungnam, Korea 463-500
Get access

Abstract

The structural and the optical properties of 10-period In0.15Ga0.85N/GaN multiple quantum wells (MQWs) have been investigated using HRXRD (high-resolution X-ray diffraction) and PL (photoluminescence). For the samples, the barrier thickness was kept constant, 7.5 nm and the well thicknesses were varied, 1.5, 3.0, 4.5, and 6.0 nm. For the structural characterization, an ω/2θ-scan and an ω-scan for GaN (00 2) reflection and a reciprocal space mapping (RSM) around the GaN (10 5) lattice point were employed. The average strain for the MQWs increased as the well thickness increased. The MQW with a 6.0 nm well thickness experienced lattice relaxation and the crystallinity of the sample was poor compared to that of the other samples. MQWs with well thicknesses of 1.5, 3.0 and 4.5 nm, however, maintained lattice coherency with the GaN epilayers underneath, and the critical well thickness for lattice relaxation of the MQWs used in the study was 6.0 nm. The PL spectra showed that the relative emission intensity of the sample with a 6.0 nm well thickness was lower than for the others, a fact consistent with the X-ray results. The emission intensity, therefore, is considered to be affected by defects due to lattice relaxation of the epilayer.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Ambacher, O, J. Phys. D: Appl. Phys. 32, 2653 (1998)CrossRefGoogle Scholar
2. Bai, J., Wang, T., and Sakai, S., J. Appl. Phys. 88, 4729 (2000)CrossRefGoogle Scholar
3. Matthews, J. W. and Blackeslee, A. E., J. Crystal Growth 32, 256 (1974)Google Scholar
4. Li, Wei, Bergman, Peder, Ivanov, Ivan, Ni, Wei-xin, Amano, H. and Akasa, I., Appl. Phys. Lett. 69, 3390 (1996)CrossRefGoogle Scholar
5. Kapolnek, D., Wu, X. H., Heying, B., Keller, S., Keller, B. P., Mishra, U. K., DenBaars, S. P. and Speck, J. S., Appl. Phys. Lett. 67, 1541 (1995)CrossRefGoogle Scholar
6. Bauer, Gunther and Richter, Wolfgang, Optical Characterization of Epitaxial Semiconductor Layer (Springer, New York, 1996), pp. 294298.CrossRefGoogle Scholar
7. Fewster, Paul F, X-Ray Scattering from Semiconductors (Imperial College Press, London, 2000), pp. 244253.Google Scholar
8. Fischer, A., Kuhne, H. and Richter, H., Phys. Rev. Lett. 73, 2712 (1994)CrossRefGoogle Scholar
9. Liu, H., Kim, J. G., Ludwig, M. H. and Park, R. M., Appl. Phys. Lett. 71, 347 (1997)CrossRefGoogle Scholar

Save article to Kindle

To save this article to your Kindle, first ensure coreplatform@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about saving to your Kindle.

Note you can select to save to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Structural and Optical Properties of InGaN/GaN Multi-Quantum Well Structures with Different Well Widths
Available formats
×

Save article to Dropbox

To save this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Dropbox account. Find out more about saving content to Dropbox.

Structural and Optical Properties of InGaN/GaN Multi-Quantum Well Structures with Different Well Widths
Available formats
×

Save article to Google Drive

To save this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Google Drive account. Find out more about saving content to Google Drive.

Structural and Optical Properties of InGaN/GaN Multi-Quantum Well Structures with Different Well Widths
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *