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The Stepwise Cross-sectional Crystalline Analysis of the Stress Induced Voiding in Cu Interconnect

Published online by Cambridge University Press:  01 February 2011

Hyo-Jong Lee
Affiliation:
ocma97@hanmail.net, Seoul National University, School of Materials Science and Engineering, San 56-1, Shinrim-dong, Kwanak-gu, Seoul, 151-744, Korea, Republic of, 82-2-880-8306, 82-2-885-9671
Heung Nam Han
Affiliation:
hnhan@snu.ac.kr, Seoul National University, School of Materials Science and Engineering, San 56-1, Shinrim-dong, Kwanak-gu, Seoul, 151-744, Korea, Republic of
Suk Hoon Kang
Affiliation:
sangle77@snu.ac.kr, Seoul National University, School of Materials Science and Engineering, San 56-1, Shinrim-dong, Kwanak-gu, Seoul, 151-744, Korea, Republic of
Jeong-Yun Sun
Affiliation:
scrollin@snu.ac.kr, Seoul National University, School of Materials Science and Engineering, San 56-1, Shinrim-dong, Kwanak-gu, Seoul, 151-744, Korea, Republic of
Kyu Hwan Oh
Affiliation:
Kyuhwan@snu.ac.kr, Seoul National University, School of Materials Science and Engineering, San 56-1, Shinrim-dong, Kwanak-gu, Seoul, 151-744, Korea, Republic of
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Abstract

In a crystallographic study of stress induced voiding of copper interconnect, the planar electron backscattered diffraction analysis showed that the void was initiated at the triple junction of the grain boundaries, not at the junction of the twin boundary and grain boundary. By using stepwise cross-sectional crystalline investigation for the void, it was possible to rebuild 3D crystalline structure near the void. From the stress calculation based on the measured crystalline structures, the hydrostatic stress was highly concentrated at the triple junction of the twin boundary and grain boundary, but experimentally, there was no voiding at that. The voiding in the copper interconnect may depend mainly on the boundary instability.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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