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Spectral Sensitivities of X-Ray Diffraction and Atomic Force Microscopy to the Roughness of Si/SiO2 Interfaces

Published online by Cambridge University Press:  21 February 2011

K. W. Evans-Lutterodt
AT&T Bell Laboratories Murray Hill, NJ 07974
Mau-Tsu Tang
S.R.R.C, Taiwan R.O.C.
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Root mean square measurements of the Si(001)/SiO2 interface have been performed with a variety of techniques. Using X-ray diffraction to represent the diffraction class of techniques, and atomic force microscopy to represent imaging techniques, we discuss the effect that limitations of each technique have on experimental results.

Research Article
Copyright © Materials Research Society 1995

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