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Spatial characterization of Doped Sic Wafers

Published online by Cambridge University Press:  10 February 2011

J. C. Burton ,
L. Sun ,
M. Pophristic ,
J. Li ,
F. H. Long ,
Z. C. Feng  and
I. Ferguson
J. C. Burton
Affiliation:
Chemistry Dept., Rutgers University, Piscataway, NJ 08854, flhong@rutchem.rutgers.edu
L. Sun
Affiliation:
Chemistry Dept., Rutgers University, Piscataway, NJ 08854, flhong@rutchem.rutgers.edu
M. Pophristic
Affiliation:
Chemistry Dept., Rutgers University, Piscataway, NJ 08854, flhong@rutchem.rutgers.edu
J. Li
Affiliation:
Chemistry Dept., Rutgers University, Piscataway, NJ 08854, flhong@rutchem.rutgers.edu
F. H. Long
Affiliation:
Chemistry Dept., Rutgers University, Piscataway, NJ 08854, flhong@rutchem.rutgers.edu
Z. C. Feng
Affiliation:
EMCORE Corp., Somerset, NJ 08873
I. Ferguson
Affiliation:
EMCORE Corp., Somerset, NJ 08873
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Abstract

Raman spectroscopy has been used to investigate wafers of both 4H-SiC and 6H-SiC. The wafers studied were semi-insulating and n-type (nitrogen) doped with concentrations between 2.1 × 1018 cm−3 and 1.2 × 1019 cm−3. Significant coupling of the A1 longitudinal optical (LO) phonon to the plasmon mode was observed. The position of this peak shows a direct correlation with the carrier concentration. Examination of the Raman spectra from different positions on the wafer yielded a rudimentary spatial map of the carrier concentration. This data is compared with a resistivity map of the wafer. These results suggest that Raman spectroscopy of the LO phonon-plasmon mode can be used as a noninvasive, in situ diagnostic for SiC wafer production and substrate evaluation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 297
Copyright
Copyright © Materials Research Society 1998

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References

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