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SPA Monitoring of GaN Movpe Surface

Published online by Cambridge University Press:  10 February 2011

Naoki Kobayashi
Affiliation:
NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan
Yasuyuki Kobayashi
Affiliation:
NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan
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Abstract

For the purpose of clarifying the growth mechanism of GaN metal-organic vapor phase epitaxy (MOVPE), the GaN surface during the growth on the (0001) sapphire substrate were in-situ monitored by surface photo-absorption (SPA) method. Ga-rich and N-rich surfaces can be distinguished by their reflectivities. It is found that the surface stoichiometry changes with the substrate temperature and with the carrier gas. In the nitrogen carrier gas, a N-rich GaN surface is stably formed at temperatures up to about 1000°C under NH3 flow. In contrast, the surface in H2 carrier gas is N-rich below 720°C, but becomes Ga-rich above 850°C. The desorption kinetics indicates that H2 enhances the N desorption.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

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