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Six-Inch Diameter GaAs on Si Wafers

Published online by Cambridge University Press:  28 February 2011

Jack P. Salerno ,
D. S. Hill ,
J. W. Lee ,
R. E. McCullough  and
John C. C. Fan
Jack P. Salerno
Affiliation:
Kopin Corporation, 695 Myles Standish Blvd., Taunton, MA 02780.
D. S. Hill
Affiliation:
Kopin Corporation, 695 Myles Standish Blvd., Taunton, MA 02780.
J. W. Lee
Affiliation:
Kopin Corporation, 695 Myles Standish Blvd., Taunton, MA 02780.
R. E. McCullough
Affiliation:
Kopin Corporation, 695 Myles Standish Blvd., Taunton, MA 02780.
John C. C. Fan
Affiliation:
Kopin Corporation, 695 Myles Standish Blvd., Taunton, MA 02780.
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Abstract

The growth of high-quality single crystal GaAs on Si wafers up to six inches in diameter by organometallic chemical vapor deposition (OMCVD) is reported. These wafers have specular surfaces, excellent thickness uniformity, and are shown to have properties comparable to those of smaller diameter GaAs on Si wafers. The mechanical and electrical properties of the six inch GaAs on Si wafers are shown to be suitable for GaAs device fabrication.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 117
Copyright
Copyright © Materials Research Society 1988

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References

1 Nonaka, T., Akiyama, M., Kawarada, Y., and Kaminishi, K., Jpn. J. Appl. Phys. 23, L919 (1984).Google Scholar
2 Shichijo, H., Lee, J.W., McLevige, W. V., and Taddiken, A.H., IEEE Electron Dev. Lett. EDL–8, 121 (1987).CrossRefGoogle Scholar
3 Choi, H.K., Turner, G.W., Tsaur, B.-Y., and Windhorn, T.H., in Heteroepitaxy on Silicon, Fan, J.C.C. and Poate, J.M., eds. (Materials Research Society, Pittsburg, PA, 1986) p. 165.Google Scholar
4 Ito, C. R., Feng, M., Eu, Y.K., and Kim, H.B., in Heteroepitaxy on Silicon, Fan, J.C.C. and Poate, J.M., eds. (Materials Research Society, Pittsburg, PA, 1986) p. 197.Google Scholar
5 Salerno, J.P., Lee, J.W., McCullough, R.E., and Gale, R.P., in Heteroepitaxy on Silicon II, Fan, J.C C., Phillips, J.M., and Tsaur, B.-Y., eds. (Materials Research Soc., Pittsburg, 1987) p. 119.Google Scholar
6 Akiyama, M., Kawarada, Y., and Kaminishi, K., Jpn. J. Appl. Phys. 23, L843 (1984).CrossRefGoogle Scholar
7 Lee, J.W., Bowen, D.K., and Salerno, J.P., in Heteroepitaxy on Silicon II, Fan, J.C C., Phillips, J.M., and Tsaur, B.-Y., eds. (Materials Research Soc., Pittsburg, 1987) p. 193.Google Scholar
8 Soga, T., Hattori, S., Sakai, S., and Umeno, M., J. Cryst. Growth 77, 498 (1986).Google Scholar
9 Zemon, S., Shastry, S.K., Norris, P., Jagannath, C., and Lambert, G., in Heteroepitaxy on Silicon, Fan, J.C.C. and Poate, J.M., eds. (Materials Research Society, Pittsburg, PA, 1986) p. 203.Google Scholar
10 Lee, J.W., McCullough, R.E., and Morrison, R.H., this proceedings.Google Scholar