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Single crystallization of Ba8AlxSi46-x clathrate by using the flux Czochralski method

Published online by Cambridge University Press:  07 July 2011

Yusuke Nakakohara
Affiliation:
Department of Materials Science and Engineering, Kyushu University, 744Motooka, Fukuoka, 819-0395, Japan
Naoki Mugita
Affiliation:
Department of Materials Science and Engineering, Kyushu University, 744Motooka, Fukuoka, 819-0395, Japan
Yuya Nagatomo
Affiliation:
Department of Materials Science and Engineering, Kyushu University, 744Motooka, Fukuoka, 819-0395, Japan
Makoto Saisho
Affiliation:
Department of Materials Science and Engineering, Kyushu University, 744Motooka, Fukuoka, 819-0395, Japan
Teruaki Motooka
Affiliation:
Cleanroom Laboratory Facility, Kyushu University 8-7Yayoigaoka, Tosu, Saga 841-0005, Japan
Ryo Teranishi
Affiliation:
Department of Materials Science and Engineering, Kyushu University, 744Motooka, Fukuoka, 819-0395, Japan
Shinji Munetoh
Affiliation:
Department of Materials Science and Engineering, Kyushu University, 744Motooka, Fukuoka, 819-0395, Japan
Corresponding
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Abstract

We have synthesized single crystalline Ba8AlxSix-46 clathrates by using the flux Czochralski (CZ) method with Al-rich melt. The specific electric resistivity, the Seebeck coefficient and the power factor of single crystalline Ba8Al14Si32 were 0.73 mΩcm,70.0μV/K and 6.8×10-4 V2/K2Ωm, respectively. These values are higher than that of single crystalline Ba8Al12Si34 clathrate because of the reduced carrier concentration. It is indicated that Al contents and the carrier concentration of single crystalline Ba8AlxSi46-x can be controlled by using the flux Czochralski method.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

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Single crystallization of Ba8AlxSi46-x clathrate by using the flux Czochralski method
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