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Silicon Epitaxial Regrowth Passivation of SiGe Nanostructures Pattered by AFM Oxidation

Published online by Cambridge University Press:  11 February 2011

Xiang-Zheng Bo ,
Leonid P. Rokhinson  and
J. C. Sturm
Xiang-Zheng Bo
Affiliation:
Center for Photonics and Opto-Electronic Materials, Department of Electrical Engineering Princeton University, Princeton, NJ 08544, USA, Email: boxz@princeton.edu
Leonid P. Rokhinson
Affiliation:
Center for Photonics and Opto-Electronic Materials, Department of Electrical Engineering Princeton University, Princeton, NJ 08544, USA, Email: boxz@princeton.edu
J. C. Sturm
Affiliation:
Center for Photonics and Opto-Electronic Materials, Department of Electrical Engineering Princeton University, Princeton, NJ 08544, USA, Email: boxz@princeton.edu
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Abstract

SiGe quantum devices were demonstrated by AFM oxidation and selective wet etching with features size down to 50 nm. To passivate the devices and eliminate the interface states between Si/SiO2, low temperature regrowth of epitaxial silicon over strained SiGe has been tested. The silicon regrowth on Si0.8Ge0.2 was done by rapid thermal chemical vapor deposition (RTCVD) at 700 °C using a hydrogen pre-cleaning process at 800 °C and 10 torr. SIMS analysis and photoluminescence (PL) of strained SiGe capped with epitaxial regrown silicon show a clean interface. Nano-gaps between doped SiGe filled and overgrown with epitaxial silicon show an electrical insulating property at 4.2 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , E14.5
Copyright
Copyright © Materials Research Society 2003

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References

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