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Shadow Step Structures for CV Dot Formation and Evaluation

Published online by Cambridge University Press:  15 February 2011

Nitin B. Shah
Affiliation:
Phillips Components-Signetics Company, 811 E. Arques Avenue Sunnyvale, California 94086
Warren C. Rosvold
Affiliation:
Phillips Components-Signetics Company, 811 E. Arques Avenue Sunnyvale, California 94086
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Abstract

“Shadow Step Structures” (3S) [1] are pre-patterned mesa-type geometries which are electrically self-isolating when overlayed with conducting thin films. This structure has been successfully implemented to generate CV dot structures. This CV dot structure eliminates the need for screen or photomasking after the oxide growth, thus eliminating manual handling, poor definition of dots due to “shadow screens”, and eliminates the possibility of contamination from screens and/or chemicals. This technique is very useful to qualify metal coaters as opposed to conventional techniques which involve patterning after metal deposition and has the advantage of fast turnaround and inherent cost savings. Measurement fidelity has been demonstrated via a large statistical sampling and is shown to give CV results consistently more accurate and superior to CV structures generated using the conventional techniques of metal shadow screens or photo masking.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Rosvold., W., “Shadow Step Structures for the Analysis of Thin Film Conductors”, VMIC Conference, June 13, 1989.Google Scholar
2. Harme, D., Hazedonk, T., Mylroie, S., Orona, J., Philips Research Laboratories Sunnyvale, Internal report July 08, 1983.Google Scholar