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Self-Organization of Steps and Domain Boundaries of 7×7 Reconstruction on Si(111)

Published online by Cambridge University Press:  10 February 2011

H Hibino ,
Y. Homma  and
T. Ogino
H Hibino
Affiliation:
NTT Basic Research Laboratories, Atsugi, Kanagawa 243–0198, Japan
Y. Homma
Affiliation:
NTT Basic Research Laboratories, Atsugi, Kanagawa 243–0198, Japan
T. Ogino
Affiliation:
NTT Basic Research Laboratories, Atsugi, Kanagawa 243–0198, Japan
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Abstract

We describe three different aspects of the self-organization of steps and domain boundaries of a 7×7 reconstruction on SI(111) surfaces. The first is the formation of a triangular-tiled pattern of “1×1’ and 7×7 domains during the phase transition. ‘1÷1’ and 7×7 domains have different surface stresses. The triangular-tiled pattern is stabilized through stress relaxation. The second is the step arrangement inside a hole, which was fabricated by a standard lithographic technique. The step arrangement in the hole depends on the temperature. Below the ‘1×1’-to-7×7 phase transition, the hole has a three-fold symmetry consisting of step-bunched and non-bunched regions. This is because the step arrangement on the vicinal Si(111) surfaces depends on the direction of the steps. The third aspect is the formation of a pattern of steps and domain boundaries induced by Si growth. During the step-flow growth on Si(111), steps preferentially protrude along the domain boundaries on the lower terrace. The resulting changes in step shape induce a unique rearrangement of the domain boundaries, the number of which decreases during growth. However, when a periodic pattern is formed in the initial stages, it remains stable during growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 584 , 1999 , 59
Copyright
Copyright © Materials Research Society 2000

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