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Selective Chemical Vapour Deposition of Tungsten Using SiH4/WF6 Chemistry

Published online by Cambridge University Press:  21 February 2011

C. A. van der Jeugd ,
A. H. Verbruggen ,
G. J. Leusink ,
G. C. A. M. Janssen  and
S. Radelaar
C. A. van der Jeugd
Affiliation:
Centre for Submicron Technology, DIMES, Delft University of Technology, P.O. box 5046, 2600 GA Delft, The Netherlands
A. H. Verbruggen
Affiliation:
Centre for Submicron Technology, DIMES, Delft University of Technology, P.O. box 5046, 2600 GA Delft, The Netherlands
G. J. Leusink
Affiliation:
Centre for Submicron Technology, DIMES, Delft University of Technology, P.O. box 5046, 2600 GA Delft, The Netherlands
G. C. A. M. Janssen
Affiliation:
Centre for Submicron Technology, DIMES, Delft University of Technology, P.O. box 5046, 2600 GA Delft, The Netherlands
S. Radelaar
Affiliation:
Centre for Submicron Technology, DIMES, Delft University of Technology, P.O. box 5046, 2600 GA Delft, The Netherlands
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Abstract

The effect of deposition temperature and SiH4/WF6 flow ratio on the resistivity and impurity content of SiH4/WF6 tungsten films has been investigated. It is found that low deposition temperatures and high SiH4/WF6 ratios result in films with a high resistivity up to 150 μΩcm, whereas films deposited at high temperatures have a resistivity of 9 μΩcm. From Electron Probe Micro Analysis and Auger Electron Spectroscopy we conclude that the resistivity increase is due to silicon which is incorporated in the tungsten film during deposition. This results in a resistivity increase of 20 to 40 μΩcm per at% Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 168 , 1989 , 179
Copyright
Copyright © Materials Research Society 1990

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References

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