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Second Derivative Ballistic Electron Emission Spectroscopy in Au/(AlGa)As

Published online by Cambridge University Press:  10 February 2011

M. Kozhevnikov ,
V. Narayanamurti ,
D. L. Smith  and
Yi-Jen Chiu
M. Kozhevnikov
Affiliation:
Gordon McKay Laboratory, DEAS, Harvard University, Cambridge, MA 02138
V. Narayanamurti
Affiliation:
Gordon McKay Laboratory, DEAS, Harvard University, Cambridge, MA 02138
D. L. Smith
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545
Yi-Jen Chiu
Affiliation:
ECE Department, University of California, Santa Barbara, CA 93106
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Abstract

Our current study focuses on an analysis of the ballistic electron emission microscopy (BEEM) spectra of Au/(AIGa)As heterostructures to estimate quantitatively the effect of the carrier scattering in the metal, at the metal-semiconductor (m-s) interface and in the semiconductor on the multivalley carrier transport. The second derivative (SD)-BEEM spectra, representing the heterostructure transmission coefficient, show explicit partitioning of the contribution of different transport channels (Γ, L and X conduction valleys). Our analysis of SD-BEEM spectra by the developed theoretical model indicates that about 85–92% of the BEEM electrons are scattered at the nonepitaxial Au/GaAs interface. We also show that initial electron distribution among the conduction bands of the semiconductor, specified by the m-s interface scattering, is modified by the further hot-electron transport inside the semiconductor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 584 , 1999 , 207
Copyright
Copyright © Materials Research Society 2000

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