Hostname: page-component-5c6d5d7d68-7tdvq Total loading time: 0 Render date: 2024-08-15T10:05:23.306Z Has data issue: false hasContentIssue false
  • English
  • Français

Schottky Barrier Heights of PT Silicides on SiGe

Published online by Cambridge University Press:  03 September 2012

J.R. Jimenez ,
X. Xiao ,
J.C. Sturm ,
P.W. Pellegrini  and
M. Chi
J.R. Jimenez
Affiliation:
Electro-Optics Technology Center, Tufts University, Medford, MA 02155
X. Xiao
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
J.C. Sturm
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
P.W. Pellegrini
Affiliation:
Rome Laboratory, Hanscom Air Force Base, MA 01731
M. Chi
Affiliation:
Rome Laboratory, Hanscom Air Force Base, MA 01731
Get access

Abstract

Silicide/SiGe Schottky barriers are of importance for applications in infrared detectors and SiGe contacts, as well as for fundamental studies of metal-semiconductor interfaces. We have fabricated silicide/SiGe Schottky diodes by the reaction of evaporated Pt and Ir films on p-SiGe alloys with a thin Si capping layer. The onset of metal-SiGe reactions was controlled by the deposited metal thickness. The Schottky barrier heights were determined from internal photoemission. Pt-SiGe and Ir-SiGe reacted diodes have barrier heights that are higher than the corresponding silicide/p-Si diodes. PtSi/Si/SiGe diodes, on the other hand, have lower “barrier heights” that decrease with increasing Ge concentration. The smaller barrier heights in such silicide/Si/SiGe diodes are due to tunneling through the unconsumed Si layer. Equations are derived accounting for this tunneling contribution, and lead to an extracted “barrier height” that is the Si barrier height reduced by the Si/SiGe band offset. Highly bias-tunable barrier heights are obtained (e.g. 0.30 eV to 0.12 eV) by allowing the SiGe/Si band offset to extend higher in energy than the Schottky barrier, leading to a cut-off-wavelength-tunable silicide/SiGe/Si Schottky diode infrared detector.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 293
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Shepherd, F.D., Proc. SPIE 1735, 250 (1992).Google Scholar
2. Kanaya, H., Hasegawa, F., Yamaka, E., Moriyama, T., and Nakayima, M., Jap. J. Appl. Phys. 28, L544 (1989).Google Scholar
3. Liou, H.K., Wu, X., Gennser, U., Kesan, V.P., Iyer, S.S., Tu, K.N., and Yang, E.S., Appl. Phys. Lett. 60, 577 (1992).Google Scholar
4. Xiao, X., Sturm, J.C., Parihar, S.R., Lyon, S.A., Meyerhofer, D., Palfrey, S., and Shallcross, F.V., IEEE EDL–14, 199 (1993); J. Vac. Sci. Technol. B 11, 1168 (1993).Google Scholar
5. Sturm, J.C., Schwartz, P.V., Prinz, E.J., and Manoharan, H., J. Vac. Sci. Technol. B 9, 2011 (1991).Google Scholar
6. Kanaya, H., Cho, Y., Hasegawa, F., and Yamaka, E., Jap. J. Appl. Phys. 29, L850 (1990).Google Scholar
7. Mooney, J.M. and Silverman, J., IEEE Trans. Electron Devices ED–32, 33 (1985).Google Scholar
8. Sze, S.M., Physics of Semiconductor Devices, Wiley, New York, 1981.Google Scholar
9. Mooney, J.M., J. Appl. Phys. 65, 2869 (1989).Google Scholar