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Scaling Analysis of a- and poly-Si Surface Roughness by Atomic Force Microscopy

Published online by Cambridge University Press:  03 September 2012


T. Yoshinobu
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki City, Osaka 567, Japan
A. Iwamoto
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki City, Osaka 567, Japan
K. Sudoh
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki City, Osaka 567, Japan
H. Iwasaki
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki City, Osaka 567, Japan

Abstract

The scaling behavior of the surface roughness of a-and poly-Si deposited on Si was investigated by atomic force microscopy (AFM). The interface width W(L), defined as the rms roughness as a function of the linear size of the surface area, was calculated from various sizes of AFM images. W(L) increased as a power of L with the roughness exponent ∝ on shorter length scales, and saturated at a constant value of on a macroscopic scale. The value of roughness exponent a was 0.48 and 0.90 for a-and poly-Si, respectively, and σ was 1.5 and 13.6nm for 350nm-thick a-Si and 500nm-thick poly-Si, respectively. The AFM images were compared with the surfaces generated by simulation.


Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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