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Room Temperature Recovery of Light Induced Degradation in A-SI:H Solar Cells

Published online by Cambridge University Press:  21 February 2011

D. Fischer ,
N. Pellaton ,
H. Keppner ,
A. Shah  and
C. M. Fortmann
D. Fischer
Affiliation:
Institute of Microtechnology, University of Neuchâtel, CH-2000 Neuchâtel, Switzerland
N. Pellaton
Affiliation:
Institute of Microtechnology, University of Neuchâtel, CH-2000 Neuchâtel, Switzerland
H. Keppner
Affiliation:
Institute of Microtechnology, University of Neuchâtel, CH-2000 Neuchâtel, Switzerland
A. Shah
Affiliation:
Institute of Microtechnology, University of Neuchâtel, CH-2000 Neuchâtel, Switzerland
C. M. Fortmann
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716, USA
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Abstract

High intensity light-soaking and post-degradation room temperature recovery of single junction a-Si:H solar cells were investigated. After high intensity short term light-soaking, it was found that the degraded state was itself not stable. In the dark, fast degraded samples improved with time, even at room temperature. Two different sets of samples showed recovery rates in the range of 1 % gain of relative efficiency per hour. Recovery kinetics were the same in the dark and under low intensity carrier generation. Continued high intensity light soaking resulted in a steady decrease of the recovery rate with time. To explain this behavior, we suggest the presence of a non-electronic, slow process related to lattice reconfigurations that lock-in the light-induced defect states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 893
Copyright
Copyright © Materials Research Society 1992

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References

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