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Role Of Deep Level Trapping On Surface Photovoltage Of semiinsulating GaAs

Published online by Cambridge University Press:  10 February 2011

Qiang Liu ,
Harry E. Ruda ,
Ivoil P. Koutzarov ,
Lech Jedral ,
Genmao Chen  and
Manoj Prasad
Qiang Liu
Affiliation:
Department of Metallurgy and Materials Science, University of Toronto, Toronto, Ontario, Canada M5S 1A4
Harry E. Ruda
Affiliation:
Department of Metallurgy and Materials Science, University of Toronto, Toronto, Ontario, Canada M5S 1A4
Ivoil P. Koutzarov
Affiliation:
Department of Metallurgy and Materials Science, University of Toronto, Toronto, Ontario, Canada M5S 1A4
Lech Jedral
Affiliation:
Department of Metallurgy and Materials Science, University of Toronto, Toronto, Ontario, Canada M5S 1A4
Genmao Chen
Affiliation:
Department of Metallurgy and Materials Science, University of Toronto, Toronto, Ontario, Canada M5S 1A4
Manoj Prasad
Affiliation:
Department of Metallurgy and Materials Science, University of Toronto, Toronto, Ontario, Canada M5S 1A4
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Abstract

Dual beam (bias and probe) transient Surface Photovoltage (SPV) measurements were made on undoped Semi-Insulating (SI) GaAs over an extended temperature range. Above 270 K, SPV recovery transients following a bias pulse were shown to reflect near surface conductivity changes; these are in turn controlled by surface/interface state thermal emission. Owing to the absence of a strong surface electric field in this material, the emitted carriers are not immediately removed from the near surface region. The recapturing of the emitted carriers is shown to be responsible for non-exponential conductivity and reciprocal-SPV transients. This behavior is considered to be characteristic of relaxation-type semiconductors with near-surface ungated structures. Below 150 K, the photoinduced transition of EL2 from its ground to metastable state EL2& was shown to change the effective electron and hole mobilities and augment the SPV signals immediately following the bias pulse. Thermally induced EL2& recovery above 120 K decreases the SPV signal from its maximum. This decay transient was analyzed and the decay rate fitted to a single exponential. An activation energy of 0.32 eV and a pre-exponential constant of 1. 9× 1012 s−1 were obtained, and attributed to the thermal recovery rate for EL2&.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 426: Symposium J – Thin Films for Photovoltaic and Related Device , 1996 , 569
Copyright
Copyright © Materials Research Society 1996

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