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A Review of Orientation-Microstructure-Property Relationships for PZT / Metal or Metal-Oxide Layered Heterostructures

Published online by Cambridge University Press:  15 February 2011

Orlando Auciello
Affiliation:
MCNC, Electronics Technology Division, Research Triangle Park, NC 27709 N.C. State University, Materials Science and Engineering, Raleigh, NC 27695.
H. N. Al Shareef
Affiliation:
N.C. State University, Materials Science and Engineering, Raleigh, NC 27695.
K. D. Gifford
Affiliation:
N.C. State University, Materials Science and Engineering, Raleigh, NC 27695.
D. J. Lichtenwalner
Affiliation:
N.C. State University, Materials Science and Engineering, Raleigh, NC 27695.
R. Dat
Affiliation:
N.C. State University, Materials Science and Engineering, Raleigh, NC 27695.
K. R. Bellur
Affiliation:
N.C. State University, Materials Science and Engineering, Raleigh, NC 27695.
A. I. Kingon
Affiliation:
N.C. State University, Materials Science and Engineering, Raleigh, NC 27695.
R. Ramesh
Affiliation:
BELLCORE, Read Bank, NJ 07701
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Abstract

Studies performed by our group on orientation-microstructure-property relationships of Pb(ZrxTil1-x)O3 (PZT) / metal or metal-oxide layered heterostructure are reviewed. The work discussed is related to the synthesis and characterization of ferroelectric PZT and conductive Pt, RuO2, and Lao.5Sr0.5CoO3 layers and their integration into heterostructure capacitors suitable for non-volatile memories. The main objective of our research was to determine the influence of deposition techniques and their related parameters and layer processing on the orientation, microstructure, and properties of PZT-based capacitors, with the goal of controlling electrical properties such as polarization fatigue, retention, and imprint effects, in order to produce commercial non-volatile ferroelectric memories. The work discussed relates to the synthesis of films by ion beam sputter-deposition (IBSD), and pulsed laser ablation deposition (PLAD), where the heterostructures are grown in-situ without exposing the interfaces to uncontrollable atmospheric conditions. Comparisons are presented between orientation and microstructural characteristics and properties of PZT heterostructure capacitors produced by IBSD and PLAD and those synthesized by the sol-gel technique. The work reviewed indicates that substrate and template layers (at the ferroelectric/bottom electrode interface) and/or bottom electrode material type contribute to the control of orientation and/or microstructure, and properties of PZT-based capacitors.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

1. Carrano, J., Sudhama, C., Lee, J., Tasch, A., Shepherd, W.H., and Abt, N., IEEE Trans. Ultrasonics, Ferroelectrics, and Freq. Control, 38, 690 (1991).CrossRefGoogle Scholar
2. Evans, J.T. and Womack, R., IEEE J. Solid State Circuits, 23, 1171 (1988).CrossRefGoogle Scholar
3. Scott, J.F. and Paz de Araujo, C.A., Science, 246, 1400 (1989).CrossRefGoogle Scholar
4. Dey, S. and Zuleeg, R., Ferroelectrics, 108, 37 (1990).CrossRefGoogle Scholar
5. Proceedings of the 3th International Symposium on Integrated Ferroelectrics, edited by Araujo, C.A. Paz de (University of Colorado Press, Colorado Springs 1991). Also, Proceedings of the 4th International Symposium on Integrated Ferroelectrics, edited by Paz de Araujo, C.A. (University of Colorado Press, Colorado Springs, 1992).Google Scholar
6. Materials Research Society Symp. Proc. “Ferroelectric Thin Films I (vol. 200, 1990), edited by Myers, E.R. and Kingon, A.I., and “Ferroelectric Thin Films II” (vol. 243, 1991), edited by A.I. Kingon, E.R. Myers, and B. Tuttle (Materials Research Society, Pittsburgh, Pennsylvania).Google Scholar
7. Multicomponent and Multilayered Thin Films for Advanced Microtechnologies: Techniques. Fundamentals and Devices, NATO/ASI Book Series E, vol.234, edited by Auciello, G. and Engemann, J. (Kluwer Academic Publishers, The Netherlands, 1993).CrossRefGoogle Scholar
8. Mihara, T., Watanabe, H., Paz de Araujo, C.A., Cuchiaro, J., Scott, M., McMillan, L.D., Proc. 4th Intern. Symp. on Integrated Ferroelectrics, edited by Paz de Araujo, C.A. (University of Colorado Press, Colorado Springs, 1992) p. 137.Google Scholar
9. Kwok, C.K., Vijay, D.P., Desu, S. B., Parikh, N.R., and Hill, E.A., Proceedings of the 4th Intern. Symp. on Integrated Ferroelectrics, edited by Paz de Araujo, C.A. (University of Colorado Press, Colorado Springs, 1992) p. 412.Google Scholar
10. Al-Shareef, H.N., Bellur, K.R., Auciello, O., and Kingon, A.I., Proc. 5th Intern. Symp. on Integrated Ferroelectrics. edited by Paz de Araujo, C.A. (University of Colorado Press, in press, 1993).Google Scholar
11. Auciello, G., Gifford, K.D., and Kingon, A.I., Appl. Phys. Lett. (in press, 1994).Google Scholar
12. Gifford, K.D., Auciello, G., and Kingon, A.I., Integrated Ferroelectrics (in press, 1994).Google Scholar
13. Ramesh, R., Gilchrist, H., Sand, T., Keramidas, V.G., Haakenaasen, R., and Fork, D.K., Appl. Phys. Lett., 63, 3592 (1993).CrossRefGoogle Scholar
14. Lichtenwalner, D.J., Dat, R., Auciello, O., and Kingon, A.I., Ferroelectrics (in press, 1994).Google Scholar
15. Dat, R., Lichtenwalner, D.J., Auciello, G., and Kingon, A.I., Appl. Phys. Lett. (in press, 1994).Google Scholar
16. Ramesh, R., Lee, J., Sands, T., Keramidas, V.G., and Auciello, O., Integrated Ferroelectrics (in press, 1994)Google Scholar
17. Ramesh, R., Lee, J., Sands, T., Keramidas, V.G., and Auciello, O., Appl. Phys. Lett. (in press, 1994).Google Scholar
18. Swartz, S.L., Bright, S.J., Melling, P.J., and Shrout, T.R., Ferroelectrics, 108, 71 (1990).CrossRefGoogle Scholar
19. Kwok, C.K. and Desu, S., J. Mater. Res., 8, 339 (1993).CrossRefGoogle Scholar
20. Kanno, I., Hayashi, S., Kamada, T., Kitagawa, M., Hirao, T., Jap. J. Appl. Phys, 32, Part 1, No. 9B, 4057 (1993)CrossRefGoogle Scholar
21. Krauss, A.R. and Auciello, G., US patent 4.923.585 (1990).Google Scholar
22. Auciello, G., Kingon, A.I., Krauss, A.R., and Lichtenwalner, D.J., in “Multicomponent and Multilayered Thin Films for Advanced Microtechnologies: Techniques. Fundamentals. and Applications. NATO Book Series. E24, edited by Auciello, O. and Engemann, J. (Kluwer Academic Publishers, The Nehterlands, 1993) p. 15 1.CrossRefGoogle Scholar
23. Schwartz, R.W., Assink, R.A., and Headly, T.J., MRS Symp.Proc., vol.243, 245 (1992).CrossRefGoogle Scholar
24. Gifford, K.D., Al-Shareef, H.N., Rou, S.H., Hren, P.D., Auciello, O., and Kingon, A.I., MRS Symp. Proc., vol.243, 191 (1992).CrossRefGoogle Scholar
25. Shareef, H. N. Al -, Gifford, K. D., Hren, P. D., Rou, S. H., Auciello, O., and Kingon, A.I., Integrated Ferroelectrics, 3, 225 (1993).Google Scholar
26. Jonscher, A.K., Dielectric Relaxation in Solids, (London: Chelsea Dielectric Press) (1993) p. 117.Google Scholar
27. Chen, X., Kingon, A.I., Mantese, L., Auciello, O., and Hsie, K.Y., Integrated Ferroelectrics, 3, 355 (1993).CrossRefGoogle Scholar
28. Cheung, J.T., Morgan, P.E.D., and Neurgaonkar, R., Proceedings of the 4th International Symposium on Intepated Ferroelectrics, edited by Paz de Araujo, C.A. (University of Colorado Press, Colorado Springs, 1992) p. 158.Google Scholar
29. Al-Shareef, H.N., Bellur, K.R., Auciello, O., and Kingon, A.I., Integrated Ferroelectrics (submitted, 1994).Google Scholar

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A Review of Orientation-Microstructure-Property Relationships for PZT / Metal or Metal-Oxide Layered Heterostructures
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