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Reversible Ordering of a-Si1-xGex by the Combined Effect of Light and Temperature

Published online by Cambridge University Press:  21 March 2011

P. Martín
Affiliation:
Dpto. Física de la Materia Condensada, E.T.S.I.I., U. de Valladolid, Valladolid, Spain.
A. Torres
Affiliation:
Dpto. Física de la Materia Condensada, E.T.S.I.I., U. de Valladolid, Valladolid, Spain.
J. Jiménez
Affiliation:
Dpto. Física de la Materia Condensada, E.T.S.I.I., U. de Valladolid, Valladolid, Spain.
A. Rodríguez
Affiliation:
Dpto. Tecnología Electriónica, E.T.S.I.T., Universidad Politécnica de Madrid, Madrid, Spain.
J. Sangrador
Affiliation:
Dpto. Tecnología Electriónica, E.T.S.I.T., Universidad Politécnica de Madrid, Madrid, Spain.
T. Rodríguez
Affiliation:
Dpto. Tecnología Electriónica, E.T.S.I.T., Universidad Politécnica de Madrid, Madrid, Spain.
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Abstract

Amorphous Si and a-Si1-xGex (0 ≤= x ≤= 0.38) films illuminated by above bandgap light, and heated between 110 and 180°C, undergoes an ordering transition, which is reversed to the amorphous phase by either heating up above 180°C or cooling down below 110°C. This structural change is investigated by Raman spectroscopy. The changes observed in the Raman spectra reveal the formation of small ordered clusters (only a few lattice parameters in diameter). The ordered state was not observed by the only effect of either light or temperature, suggesting that specific temperature and light excitation conditions are necessary to generate and support the ordered state, that appears as a nano-crystalline structure.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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