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Reliability of Implant-Isolation Regions in Highly-Doped GaAs-Based Structures

Published online by Cambridge University Press:  22 February 2011


F. Ren
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. R. Lothian
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
T. R. Fullowan
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
C. R. Abernathy
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
S. N. G. Chu
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974

Abstract

Highly-doped n-type (2 × 1019 cm−3) and p-type (7 × 1019 cm−3) GaAs layers were implanted with multiple energy F+ or H+ ions and subsequently annealed at ∼550°C to produce high resistance regions. The resistance of these layers at 200°C was monitored as a function of time and showed no changes for periods of several months. This is in contrast to some previously reported data, which showed complete loss of isolation after a period of several days in proton-implanted n+ GaAs. Here, we show that isolation of heavily-doped near-surface regions by protons requires implantation through cap layers which place the peak of the nuclear stopping profile at the GaAs surface. The application of these results to isolation of thick, multilayer heterostructure devices is discussed and SIMS and TEM data are used to illustrate the redistribution of the implanted ions and the defects they create, respectively.


Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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