Hostname: page-component-788cddb947-55tpx Total loading time: 0 Render date: 2024-10-12T16:13:19.434Z Has data issue: false hasContentIssue false

The Relationship Between Crystal Structure and Hardness of Nitrogen Implanted Iron Surface Layers

Published online by Cambridge University Press:  25 February 2011

Takanobu Fujihana
Affiliation:
Advanced Technology Inc., Nase 84, Totsuka, Yokohama, Kanagawa, 245 JAPAN
Yoshio Okabe
Affiliation:
Saitama Institute of Technology, Okabe-machi, Ohsato, Saitama, 362-02 JAPAN
Masaya Iwaki
Affiliation:
RIKEN (The Institute of Physical and Chemical Research), Hirosawa 2-1, Wako, Saitama, 351-01 JAPAN
Get access

Extract

A study has been made of the relationship between crystal structure and hardness of N-implanted Fe-surface layers. The substrates used were polycrystalline Fe-sheets 1 mm thick with a purity of 99.9 %. The ion implantation of 14N+ was performed with doses ranging from 7.5×1016 to 1×1018 ions/cm2 at an energy of 100 keV. The substrate temperatures during implantation were kept at -40, 20, 100 and 200 °C. The crystal structure of N-implanted layers was identified by X-ray diffraction method (XRD). The near surface hardness was measured by a Knoop hardness tester. The XRD patterns revealed that the iron-nitride peculiar to each implantation condition was formed, and the iron-oxide was embedded in the nitrides in case of higher temperature implantation. N-implantation led to hardness increase, whose degree also depended on implantation conditions. The comparison between the structure and hardness of implanted layers indicated that, among the phases of iron-nitrides produced by 20 °C implantation, ε-phase is the hardest and the γ-Fe203 and γ'-Fe4N formed by 200 °C implantation are harder than the ε-phase nitrides. These results are discussed with respect to the surface composition estimated by Rutherford backscattering spectrometry (RBS) using 1.5 MeV 4He+-ions.

Type
Research Article
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hartley, N.E.W., Swindlehurst, W.E., Dearnaley, G. and Turner, T.F., J. Mater. Sci., 8, 900(1973).10.1007/BF02397922CrossRefGoogle Scholar
2. Hirvonen, J.K., J. Vac. Sci. Techn., 15, 1662(1978).10.1116/1.569825Google Scholar
3. Iwaki, M., Fujihana, T. and Okitaka, K., Mater. Sci. Eng., 69, 211(1985).CrossRefGoogle Scholar
4. Singer, I.L., J. Vacuum, 34, 10/11, 853(1984).10.1016/0042-207X(84)90163-5Google Scholar
5. Fayeulle, S., Marest, G., Moncoffre, N. and Tousset, J., Appl. Surf. Sci., 32, 141(1988).Google Scholar
6. Raushenbach, B., Kolitsch, A. and Hohmuth, K., Phys. Stat. Sol., 80, 471(1983).10.1002/pssa.2210800209CrossRefGoogle Scholar
7. Newey, D., Pollock, H.M. and Wilkins, M.A., in: Ion Implantation into Metals, ed. by. Ashworth, V., Grant, W.A. and Procter, R. P.M., (Pergamon Press, 1982)p. 157.CrossRefGoogle Scholar
8. A.Anttila. Keininen, J., llhrmachar, M. and Vahvaselka, S., J. Appl. Phys., 57, 4, 1423(1985).Google Scholar
9. Lindhard, J., Scharff, M. and Schiott, H.F., K. Dan. Vidensk. Selsk. Mat. Fys. Medd., 33, 14, 1(1963).Google Scholar
10. Ohira, S. and Iwaki, M., Mater. Sci. Eng., 90, 143(1987).Google Scholar
11. Fujihana, T., Okabe, Y. and Iwaki, M., to be published in Proc. of Intl. Conf. on Surface Modification of Metals by Ion Beams, Riva Del Garda, 1988.Google Scholar
12. Barnavon, T., Jaffrezic, H., Marest, G., Moncoffre, N., Tousset, J. and Fayeulle, S., Mater. Sci. Eng., 69, 531(1985).10.1016/0025-5416(85)90355-6Google Scholar
13. Moncoffre, N., lHollinger, G., Jaffrezic, H., Marest, G. and Tousset, J., Nucl. Instr. and Meth., B7/8, 177(1985).10.1016/0168-583X(85)90551-8CrossRefGoogle Scholar
14. Hutchings, R., Mater. Sci. Eng., 69, 129(1985).Google Scholar
15. Pechica, J.B., Hutchings, R. and Oliver, W.C., Nucl. Instr. and Meth. 209/210, 995(1983).Google Scholar