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Redistribution of Implanted Hydrogen in p+ GaAs(Zn) and n+ GaAs(Si) Crystais

Published online by Cambridge University Press:  26 February 2011

J. M. Zavada ,
R. G. Wilson ,
S. W. Nova ,
A. R. Von Neida  and
S. J. Pearton
J. M. Zavada
Affiliation:
European Research Office, London NW1 5TH, UK
R. G. Wilson
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
S. W. Nova
Affiliation:
C. Evans & Associates, Redwood City, CA 94063
A. R. Von Neida
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

In order to gain a better understanding of hydrogen in GaAs crystals, a Zn doped p+ GaAs wafer has been implanted with 300 keV protons (H) to a fluence of 1E16/ain and portions of the wafer have been furnace annealed at temperatures up to 600°C. The implanted H and the dopant Zn atomr were then depth profiled using secondary ion mass spectrometry (SIMS). The measurements show that the H redistributes itself in the p+ GaAs(Zn) in much the same manner as it does in n+ GaAs(Si). Movement of the implanted H begins with annealing at 200°C and proceeds rapidly with higher temperatures. However, based on the SIMS profiles, the diffusion coefficient for the H diffusing into the undamaged p+ GaAs(Zn) crystal appears to be considerably higher than that of H into n+ GaAs(Si). Electronic properties of the inplanted and annealed p+ GaAs samples have also been examined and correlated with the SINE profiles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 331
Copyright
Copyright © Materials Research Society 1988

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References

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