Skip to main content Accessibility help
×
Home
Hostname: page-component-684bc48f8b-zqvvz Total loading time: 0.281 Render date: 2021-04-13T13:57:09.191Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }

Reciprocal Space X-Ray Mapping and Transmission Electron Microscopic Studies of Coincided δ-Inas and As-Cluster Superlattices in Gaas Films Grown by Molecular-Beam Epitaxy at Low Temperature

Published online by Cambridge University Press:  10 February 2011

V. V. Chaldyshev
Affiliation:
A.F.Ioffe Physical-Technical Institute, 194021, St.Petersburg, Russia
N. A. Bert
Affiliation:
A.F.Ioffe Physical-Technical Institute, 194021, St.Petersburg, Russia
N. N. Faleev
Affiliation:
A.F.Ioffe Physical-Technical Institute, 194021, St.Petersburg, Russia
Yu. G. Musikhin
Affiliation:
A.F.Ioffe Physical-Technical Institute, 194021, St.Petersburg, Russia
A. E. Kunitsyn
Affiliation:
A.F.Ioffe Physical-Technical Institute, 194021, St.Petersburg, Russia
V. V. Preobrazhenskii
Affiliation:
Institute of Semiconductor Physics, 630090, Novosibirsk, Russia.
M. A. Putyato
Affiliation:
Institute of Semiconductor Physics, 630090, Novosibirsk, Russia.
B. R. Semyagin
Affiliation:
Institute of Semiconductor Physics, 630090, Novosibirsk, Russia.
P. Werner
Affiliation:
Max-Planck-Institute of Microstructure Physics, Halle, Germany
Y. Takeda
Affiliation:
Nagoya University, 464-8603, Nagoya, Japan
Get access

Abstract

InAs/GaAs superlattices with thin (0.5–1 monolayer) δ-InAs insertions were grown by molecular beam epitaxy at low (150–200°C) temperature. The as-grown samples contained up to 1020 cm−3 arsenic antisite defects. Transmission electron microscopic study revealed no extended defect and showed that the real thickness of δ-InAs insertions is 3–4 monolayers. This thickness seems to be due to short-range roughness of the growth surface. Low diffuse scattering and extended interference picture were observed for such superlattices by x-ray diffraction study. Superlattices of two-dimensional cluster sheets were produced by annealing of the δ-InAs/GaAs superlattices at 500–600°C. Precipitation of excess arsenic at InAs δ-layers was found to be accompanied by enhanced In-Ga intermixing, roughening the InAs δ-layers, and smoothing the x-ray interference picture. No evidence for any self-ordering in the system of nanoscale As clusters was revealed using x-ray mapping in reciprocal space.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below.

References

1.Kaminska, M., Liliental, Z.-Weber, Weber, E.R., George, T., Kortright, J.B., Smith, F.W., Tsaur, B.Y., and Calawa, A.R., Appl.Phys.Lett. 54, 1831(1989).CrossRefGoogle Scholar
2.Melloch, M.R., Mahalingam, K., Otsuka, N., Woodall, J.M., and Warren, A.C.,J. Cryst.Growth 111, 39(1991).CrossRefGoogle Scholar
3.Bert, N.A., Veinger, A.I., Vilisova, M.D., Goloshchapov, S.I., Ivonin, I.V., Kozyrev, S.V., Kunitsyn, A.E., Lavrentieva, L.G., Lubyshev, D.I., Preobrazhenskii, V.V., Semyagin, B.R., Tretyakov, V.V., Chaldyshev, V.V., and Yakubenya, M.P., Phys.Solid State 35, 1289(1993).Google Scholar
4.Cheng, T.M., Chang, C.V., Chin, A., Huang, M.F., and Huang, J.H., Appl. Phys. Lett. 64, 2517(1994).CrossRefGoogle Scholar
5.Bert, N.A., Chaldyshev, V.V., Lubyshev, D.I., Preobrazhenskii, V.V., and Semyagin, B.R., Semiconductors 29, 1170(1995).Google Scholar
6.Bert, N.A., Chaldyshev, V.V., Faleev, N.N., Kunitsyn, A.E., Lubyshev, D.I., Preobrazhenskii, V.V., Semyagin, B.R., and Tretyakov, V.V., Semicond. Sci. Technol. 12, 51(1997).CrossRefGoogle Scholar
7.Chaldyshev, V.V., Bert, N.A., Kunitsyn, A.E., Musikhin, Yu.G., Preobrazhenskii, V.V., Putyato, M.A., Semyagin, B.R., Tretyakov, V.V., and Werner, P.. Semiconductors, 32, 1036(1998).CrossRefGoogle Scholar
8. G. M. Martin. Appl. Phys. Lett., 39, 747(1981).CrossRefGoogle Scholar
9.Bert, N.A., Musikhin, Yu.G., Preobrazhenskii, V.V., Putyato, M.A., Semyagin, B.R., Suvorova, A.A., Chaldyshev, V.V., Faleev, N.N., and Werner, P., Semiconductors 32, 683(1998).CrossRefGoogle Scholar
10.Bert, N.A., Chaldyshev, V.V., Musikhin, Yu.G., Suvorova, A.A., Preobrazhenskii, V.V., Putyato, M.A., Semyagin, B.R., and Werner, P., Appl. Phys. Lett. 74, 1442(1999).CrossRefGoogle Scholar
11.Chaldyshev, V.V., Bert, N.A., Preobrazhenskii, V.V., Putyato, M.A., and Semyagin, B.R.. Materials Sci. Eng. A, 238, 148(1997).CrossRefGoogle Scholar
12.Faleev, N.N., Chaldyshev, V.V., Kunitsyn, A.E., Preobrazhenskii, V.V., Putyato, M.A., Semyagin, B.R., and Tretyakov, V.V., Semiconductors 32, 24(1998).CrossRefGoogle Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 2 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 13th April 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Reciprocal Space X-Ray Mapping and Transmission Electron Microscopic Studies of Coincided δ-Inas and As-Cluster Superlattices in Gaas Films Grown by Molecular-Beam Epitaxy at Low Temperature
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Reciprocal Space X-Ray Mapping and Transmission Electron Microscopic Studies of Coincided δ-Inas and As-Cluster Superlattices in Gaas Films Grown by Molecular-Beam Epitaxy at Low Temperature
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Reciprocal Space X-Ray Mapping and Transmission Electron Microscopic Studies of Coincided δ-Inas and As-Cluster Superlattices in Gaas Films Grown by Molecular-Beam Epitaxy at Low Temperature
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *