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Real-time x-ray scattering study of sputter-deposited LaNiO3 thin films on Si substrates

Published online by Cambridge University Press:  10 February 2011

Hsin-Yi Lee
Affiliation:
Synchrotron Radiation Research Center, Hsinchu 30077, Taiwan, Republic of China
Chih-Hao Lee
Affiliation:
Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30043, Taiwan, Republic of China
Keng S. Liang
Affiliation:
Synchrotron Radiation Research Center, Hsinchu 30077, Taiwan, Republic of China
Tai-Bor Wu
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30043, Taiwan, Republic of China
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Abstract

Real-time x-ray reflectivity and diffraction measurements under in-situ sputtering deposition conditions were performed to study the crystallization behavior of LaNiO3thin films on Si substrate. We found that an amorphous layer of 60 Å was grown in the first 6 min of the deposition and subsequently a polycrystalline overlayer was developed as observed from the in-situ x-ray reflectivity curves and diffraction patterns. Polycrystalline columnar textures of (110) and (100) were grown on the top of this amorphous film. By comparing the integrated intensities of two Bragg peaks in the plane normal of x-ray diffraction, it was found that the ability of (100)-texturization enhanced with increasing film thickness over a certain critical value.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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Real-time x-ray scattering study of sputter-deposited LaNiO3 thin films on Si substrates
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