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Reaction Pathways for Nitrogen Incorporation at Si-SiO2 Interfaces

Published online by Cambridge University Press:  10 February 2011

K. Koh ,
H. Niimi  and
G. Lucovsky
K. Koh
Affiliation:
Departments of Materials Sciences and Engineering, Physics, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27965-8202
H. Niimi
Affiliation:
Departments of Materials Sciences and Engineering, Physics, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27965-8202
G. Lucovsky
Affiliation:
Departments of Materials Sciences and Engineering, Physics, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27965-8202
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Abstract

This paper presents experimental studies in which N-atoms have been incorporated at Si-SiO2 interfaces by forming the interface and oxide film by a 300°C remote plasma assisted nitridation/oxidation process using N2O. Process dynamics have been studied by on-line Auger electron spectroscopy (AES) by interrupted plasma processing. Plasma-activated species have been identified by in-situ mass spectrometry (MS) and optical emission spectroscopy (OES). Based on AES studies using N2O, O2 and sequenced N2O and O2 source gases, reaction pathways for N-atom incorporation i) at and/or ii) removal from buried Si-SiO2 interfaces have been identified, and contrasted with reaction pathways for nitridation using conventional furnace processing. The active species for N-atom incorporation is NO+, and for oxide growth, O2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 446: Amorphous and Crystalline Insulating Thin Films–1996 , 1996 , 267
Copyright
Copyright © Materials Research Society 1997

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