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Rapid Diffusion of Molybdenum Trace Contamination in Silicon

Published online by Cambridge University Press:  21 February 2011

S. P. Tobin ,
A. C. Greenwald ,
R. G. Wolfson ,
D. L. Meier  and
P. J. Drevinsky
S. P. Tobin
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01730
A. C. Greenwald
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01730
R. G. Wolfson
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01730
D. L. Meier
Affiliation:
Westinghouse R&D Center, 1310 Beulah Road, Pittsburg, PA 15735
P. J. Drevinsky
Affiliation:
Rome Air Development Center, Solid State Sciences Division, Hanscom Air Force Base, MA 01731
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Abstract

Molybdenum contamination has been detected in silicon epitaxial layers and substrate wafers after processing in any one of several epitaxial silicon reactors. Greatly reduced minority carrier diffusion lengths and lifetimes are consistent with Mo concentrations measured by DLTS in the 1012 and 1013 cm−3 ranges. Depth profiling of diffusion length and the Mo deep level show much greater penetration than expected from previous reports of Mo as a slow diffuser. The data indicate a lower limit of 10−8 cm2/sec for the diffusion coefficient of Mo in silicon at 1200°C, consistent with high diffusivities measured for other transition metals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 36: Symposium C – Impurity Diffusion and Gettering in Silicon , 1984 , 43
Copyright
Copyright © Materials Research Society 1985

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References

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