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MRS Online Proceedings Library (OPL) MRS Online Proceedings Library (OPL)

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Raman Spectroscopy Investigation of (SiC)1-x (Ain)x, Layers Formed by Ion Implantation in 6H-SiC

Published online by Cambridge University Press:  15 February 2011

D. R. T. Zahn ,
T. Werninghaus ,
M. Thümer ,
J. Pezoldt  and
V. Heera
D. R. T. Zahn
Affiliation:
TU Chemnitz-Zwickau, Professur fur Halbleiterphysik, D-09107 Chemnitz, Germany, werni@physikus.physik.tu-chemnitz.de
T. Werninghaus
Affiliation:
TU Chemnitz-Zwickau, Professur fur Halbleiterphysik, D-09107 Chemnitz, Germany, werni@physikus.physik.tu-chemnitz.de
M. Thümer
Affiliation:
TU Chemnitz-Zwickau, Professur fur Halbleiterphysik, D-09107 Chemnitz, Germany, werni@physikus.physik.tu-chemnitz.de
J. Pezoldt
Affiliation:
TU Ilmenau, Institut fur Festkörperelektronik, D-98684 Ilmenau, Germany
V. Heera
Affiliation:
FRZ Rossendorf e.V., Institut fur lonenstrahlphysik und Materialforschung, D-0 1314 Dresden, Germany
Corresponding
E-mail address:
werni@physikus.physik.tu-chemnitz.de
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Abstract

6H silicon carbide (SiC) substrates were implanted with nitrogen and aluminum at different doses and annealed in the temperature range from 1300°C-1700°C. Micro-Raman Spectroscopy (μ-RS) measurements were performed in two sample geometries (conventional plane-view and cross-sectional). Changes of the polytype from 6H- to a cubic (SiC)1-xAIN)x, and influences in the 6H-SiC wafer up to depths of 2μm were detected. The results obtained by crosssectional μ-RS are discussed in comparison to other results from Reflection High Electron Energy Diffraction (RHEED), Rutherford Backscattering (RBS), Auger Electron Spectroscopy (AES), Transmission Electron Microscopy (TEM), and Positron Annihilation Spectroscopy (PAS) measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 729
Copyright
Copyright © Materials Research Society 1996

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References

1. Morkoc, H., Strite, S., Bao, G.B., Lin, M.E., Sverdlov, B., and Bums, M., J. Appl. Phys. 76, 1363 (1994)CrossRefGoogle Scholar
2. Feng, Z.C., Mascarenhas, A.J., Choyke, W.J., and Powell, J.A., J. Appl. Phys. 64, 3176 (1988)CrossRefGoogle Scholar
3. Feldman, D.W., Parker, J.H., Jr., Choyke, W.J., and Patrick, L., Phys. Rev. 173, 787 (1968)CrossRefGoogle Scholar
4. Werninghaus, T., Laufer, S., Hinneberg, H.-J., and Zahn, D.R.T., in Diamond Materials IV, K.V., Ravi and J.P., Dismukes (Eds.) Electrochem. Soc. Proc. 4, Pennington, NJ, (1995) p. 151 Google Scholar
5. Werninghaus, T., Friedrich, M., and Zahn, D.R.T., physica status solidi (a) 154, 269 (1996)CrossRefGoogle Scholar
6. Heera, V., Pezoldt, J., Xing, X.J., and Piroux, P., Proc. of ICSCRM-95, Kyoto, Japan, to be publishedGoogle Scholar
7. Fagen, E.A. in Silicon Carbide, Marshall, R.C., Faust, J.W. Jr.,, Ryan, C.E. (Eds.) Univ. of South Carolina, Columbia, (1974), p. 476 Google Scholar
8. Sasaki, Y., Nishina, Y., Sato, M., and Okamura, K., Phys. Rev. B40, 1762 (1989)Google Scholar
9. Heera, V., Stoemenos, J., Kögler, R., and Skorupa, W., J. Appl. Phys. 77, 2999 (1995)CrossRefGoogle Scholar
10. Pezoldt, J., Kalnin, A.A., Moskwina, D.R., and Savelyev, W.D., Nucl. Instr. and Meth. B80/81, 943 (1993)CrossRefGoogle Scholar
11..Pezoldt, J., Kalnin, A.A., and Savelyev, W.D., Nucl. Instr. and Meth. B65, 361 (1992)CrossRefGoogle Scholar
12. Pacaud, Y., Skorupa, W., Perez-Rodriguez, A., Brauer, G., Stoemenos, J., and Barklie, R.C., to be published in Nucl. Instr. and Meth. B (1995)Google Scholar

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Raman Spectroscopy Investigation of (SiC)1-x (Ain)x, Layers Formed by Ion Implantation in 6H-SiC
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