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Raman Scattering and Luminescence Study of Rapid Annealing and Laser Irradiation Effects in Ion Implanted InP
Published online by Cambridge University Press: 22 February 2011
Abstract
Raman scattering and luminescence spectroscopic techniques were applied to the study of ion implantation of InP and its annealing by a lamp, oven, or laser beam. It was found that both characterization techniques give important information on surface layer transformation during implantation and annealing.
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- Copyright © Materials Research Society 1984
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