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Raman Mapping and Finite Element Analysis of Epitaxial Lateral Overgrown GaN on Sapphire Substrates

Published online by Cambridge University Press:  11 February 2011

M. Benyoucef ,
M. Kuball ,
B. Beaumont ,
V. Bousquet  and
P. Gibart
M. Benyoucef
Affiliation:
H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom.
M. Kuball
Affiliation:
H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom.
B. Beaumont
Affiliation:
Centre de Recherches sur l'Hétéroépitaxie et ses Applications (CRHEA-CNRS), Rue Bernard Grégory, Parc Sophia Antipolis, 06560 Valbonne, France.
V. Bousquet
Affiliation:
Centre de Recherches sur l'Hétéroépitaxie et ses Applications (CRHEA-CNRS), Rue Bernard Grégory, Parc Sophia Antipolis, 06560 Valbonne, France.
P. Gibart
Affiliation:
Centre de Recherches sur l'Hétéroépitaxie et ses Applications (CRHEA-CNRS), Rue Bernard Grégory, Parc Sophia Antipolis, 06560 Valbonne, France.
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Abstract

Using micro-Raman scattering and finite element (FE) analysis, stress fields in epitaxial lateral overgrown (ELO) GaN fabricated by metalorganic vapor phase epitaxy (MOVPE) on sapphire substrates using a two-step growth method were investigated. Nearly full stress relaxation at the top ELO GaN surface can be achieved by increasing the thickness of ELO GaN to about 50 μm. Reductions in stress variation between window and overgrown regions can be achieved by using a double ELO GaN growth at a much smaller ELO thickness. Increased compressive stress at the coalescence boundary of two adjacent wings of ELO GaN was related to the presence of voids in this area. In the double ELO growth, stress near the top surface was mainly attributed to the presence of voids on top of the upper dielectric mask.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L3.12
Copyright
Copyright © Materials Research Society 2003

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References

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