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Radiation Effects Of Vacuum Ultraviolet Laser Photons on Silicon Dioxide

Published online by Cambridge University Press:  15 February 2011

K. Kurosawa
Affiliation:
Electrical & Computer Engineering Dept., University of Toronto, Toronto, Canada M5S 3G4 Department of Electrical Engineering, University of Miyazaki, Miyazaki 889-21, Japan, t0b101u@cc.miyazaki-u.ac.jp
P. R. Herman
Affiliation:
Electrical & Computer Engineering Dept., University of Toronto, Toronto, Canada M5S 3G4
E. Z. Kurmaev
Affiliation:
Institute of Metal Physics, Russian Academy of Science, Yekaterinburg, GSP-170, Russia
S. N. Shamin
Affiliation:
Institute of Metal Physics, Russian Academy of Science, Yekaterinburg, GSP-170, Russia
V. E. Galakhov
Affiliation:
Institute of Metal Physics, Russian Academy of Science, Yekaterinburg, GSP-170, Russia
Y. TakigawA
Affiliation:
Solid State Electronics, Osaka Electro-Communication University, Neyagawa, 572, Japan
W. Sasaki
Affiliation:
Department of Electrical Engineering, University of Miyazaki, Miyazaki 889-21, Japan, t0b101u@cc.miyazaki-u.ac.jp
A. Yokotani
Affiliation:
Electrical & Computer Engineering Dept., University of Toronto, Toronto, Canada M5S 3G4
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Abstract

The argon excimer laser provides 9.8-eV photons that readily surmount the electronic bandgap energy of SiO2 (∼9.0 eV), directly generating excitons in a single-photon absorption process. We have shown by Si L2,3 (Si 3s→2p) X-ray emission spectroscopy, Si 2p X-ray photoelectron spectroscopy and Raman spectroscopy that this absorption process is responsible for silicon precipitation in the silica. The X-ray emission studies further show that the silicon precipitates are crystalline, forming in highest concentration in 120–230 nm layer beneath the laserirradiated surface. Silicon precipitation was not observed on samples irradiated with 146-nm krypton excimer radiation due to a smaller 8.5-eV photon energy that is below the silica bandgap.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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