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Questions And Answers On The Activation Strain

Published online by Cambridge University Press:  15 February 2011

Michael J. Aziz
Michael J. Aziz*
Affiliation:
Division of Applied Sciences, Harvard University, 29 Oxford St., Cambridge MA 02138
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Abstract

The activation strain tensor describes the effect of nonhydrostatic stresses on atomic or interfacial Mobilities. It has been measured for solid phase epitaxial growth of crystalline Si (001) into amorphous Si. The activation strain concept is explained and some subtle points are discussed. Implications for proposed mechanisms of solid phase epitaxy are reviewed, and new implications for combined bulk and interfacial control are presented. Questions raised during the oral presentation are answered.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 449
Copyright
Copyright © Materials Research Society 1994

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References

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