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Pyroelectric Effects on 1T-1C Fram and 1Tr Fram

Published online by Cambridge University Press:  10 February 2011

In Kyeong Yoo
Affiliation:
Electronic Materials Lab., Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, Kyongki, Korea
I.S. Chung
Affiliation:
Electronic Materials Lab., Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, Kyongki, Korea
C.J. Kim
Affiliation:
Electronic Materials Lab., Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, Kyongki, Korea
J.K. Lee
Affiliation:
Electronic Materials Lab., Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, Kyongki, Korea
B.K. Jeon
Affiliation:
Samsung Electronics Co., Ltd., Suwon, Kyongki, Korea
S.B. Desu
Affiliation:
Materials and Science Engineering Dept., VA Tech, VA24061, USA
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Abstract

Pyroelectric effect on ferroelectricity was examined for PZT capacitors with diodes in series. It was observed that the magnitude of the polarization reversal increases as heating rate increases. The polarization reversal begins to decrease as heating rate becomes very high, which may stem from the fact that pyroelectric charges flow through the PZT film at high temperature as the film loses its resistance at the elevated temperature. A pure remanent polarization reversal model is suggested for the polarization reversal caused by pyroelectric charges. Based on the above results, a thermal shock test method is proposed for quality control of FRAM products. The thermal shock test reveals that pyroelectric effect can be minimized by controlling process for 1T-1C FRAM. It was also observed, by the thermal shock test, that imprint dominates pyroelectric effect in 1Tr cell with MFIS structure.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

1. Yoo, I.K., Desu, S.B., and Evans, J.T. Jr, “Proposed Test Standards for Pyroelectric Effects on Ferroelectric Memories,” Submitted, IEEE Thin-Film Ferroelectric Materials Standards Committee, 1995.Google Scholar
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